Effect of high-pressure D<sub>2</sub> and H<sub>2</sub> annealing on LFN properties in FD-SOI pTFET.

Shin, Hyun-Jin; Eadi, Sunil Babu; An, Yeong-Jin; Ryu, Tae-Gyu; Kim, Do-Woo; Lee, Hi-Deok; Kwon, Hyuk-Min

Effect of high-pressure D₂ and H₂ annealing on LFN properties in FD-SOI pTFET.

Shin, Hyun-Jin; Eadi, Sunil Babu; An, Yeong-Jin; Ryu, Tae-Gyu; Kim, Do-Woo; Lee, Hi-Deok; Kwon, Hyuk-Min.

Afiliación

Shin HJ; Department of Electronics Engineering, Chungnam National University, 99, Daehak-ro, Yuseong-gu, Daejeon, Republic of Korea.
Eadi SB; Department of Electronics Engineering, Chungnam National University, 99, Daehak-ro, Yuseong-gu, Daejeon, Republic of Korea.
An YJ; Department of Electronics Engineering, Chungnam National University, 99, Daehak-ro, Yuseong-gu, Daejeon, Republic of Korea.
Ryu TG; Department of Electronics Engineering, Chungnam National University, 99, Daehak-ro, Yuseong-gu, Daejeon, Republic of Korea.
Kim DW; Department of Semiconductor Design, Semiconductor Convergence Campus of Korea Polytechnic College, 41-12, Songwon-Gil, Kongdo-Eup, Anseong, Kyunggi-Do, Republic of Korea.
Lee HD; Department of Electronics Engineering, Chungnam National University, 99, Daehak-ro, Yuseong-gu, Daejeon, Republic of Korea. hdlee@cnu.ac.kr.
Kwon HM; Department of Semiconductor Processing Equipment, Semiconductor Convergence Campus of Korea Polytechnic College, 41-12, Songwon-Gil, Kongdo-Eup, Anseong, Kyunggi-Do, Republic of Korea. hmkwon@kopo.ac.kr.

Sci Rep ; 12(1): 18516, 2022 Nov 02.

Article en En | MEDLINE | ID: mdl-36323847

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Sci Rep Año: 2022 Tipo del documento: Article Pais de publicación: Reino Unido

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