Threshold Voltage Adjustment by Varying Ge Content in SiGe p-Channel for Single Metal Shared Gate Complementary FET (CFET).

Sun, Chong-Jhe; Wu, Chen-Han; Yao, Yi-Ju; Lin, Shan-Wen; Yan, Siao-Cheng; Lin, Yi-Wen; Wu, Yung-Chun

Sun, Chong-Jhe; Wu, Chen-Han; Yao, Yi-Ju; Lin, Shan-Wen; Yan, Siao-Cheng; Lin, Yi-Wen; Wu, Yung-Chun.

Afiliación

Sun CJ; Department of Engineering and System Science, National Tsing Hua University, Hsinchu 30013, Taiwan.
Wu CH; Department of Engineering and System Science, National Tsing Hua University, Hsinchu 30013, Taiwan.
Yao YJ; Department of Engineering and System Science, National Tsing Hua University, Hsinchu 30013, Taiwan.
Lin SW; Department of Engineering and System Science, National Tsing Hua University, Hsinchu 30013, Taiwan.
Yan SC; Department of Engineering and System Science, National Tsing Hua University, Hsinchu 30013, Taiwan.
Lin YW; Department of Engineering and System Science, National Tsing Hua University, Hsinchu 30013, Taiwan.
Wu YC; Department of Engineering and System Science, National Tsing Hua University, Hsinchu 30013, Taiwan.

Nanomaterials (Basel) ; 12(20)2022 Oct 21.

Article en En | MEDLINE | ID: mdl-36296902

Palabras clave

CMOS inverter; SiGe; complementary FET (CFET); technology computer-aided design (TCAD); threshold voltage adjustment

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Nanomaterials (Basel) Año: 2022 Tipo del documento: Article País de afiliación: Taiwán Pais de publicación: Suiza

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