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Effect of Post-Annealing on Barrier Modulations in Pd/IGZO/SiO2/p+-Si Memristors.
Kim, Donguk; Lee, Hee Jun; Yang, Tae Jun; Choi, Woo Sik; Kim, Changwook; Choi, Sung-Jin; Bae, Jong-Ho; Kim, Dong Myong; Kim, Sungjun; Kim, Dae Hwan.
Afiliación
  • Kim D; School of Electrical Engineering, Kookmin University, Seoul 02707, Korea.
  • Lee HJ; School of Electrical Engineering, Kookmin University, Seoul 02707, Korea.
  • Yang TJ; School of Electrical Engineering, Kookmin University, Seoul 02707, Korea.
  • Choi WS; School of Electrical Engineering, Kookmin University, Seoul 02707, Korea.
  • Kim C; School of Electrical Engineering, Kookmin University, Seoul 02707, Korea.
  • Choi SJ; School of Electrical Engineering, Kookmin University, Seoul 02707, Korea.
  • Bae JH; School of Electrical Engineering, Kookmin University, Seoul 02707, Korea.
  • Kim DM; School of Electrical Engineering, Kookmin University, Seoul 02707, Korea.
  • Kim S; Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, Korea.
  • Kim DH; School of Electrical Engineering, Kookmin University, Seoul 02707, Korea.
Nanomaterials (Basel) ; 12(20)2022 Oct 13.
Article en En | MEDLINE | ID: mdl-36296772
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Tipo de estudio: Prognostic_studies Idioma: En Revista: Nanomaterials (Basel) Año: 2022 Tipo del documento: Article Pais de publicación: Suiza
Texto completo
Añadir a Mi BVS
Imprimir
XML
PubMed Links
Buscar en Google

Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Tipo de estudio: Prognostic_studies Idioma: En Revista: Nanomaterials (Basel) Año: 2022 Tipo del documento: Article Pais de publicación: Suiza