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Atomic Layer Deposition of Sb2 Te3 /GeTe Superlattice Film and Its Melt-Quenching-Free Phase-Transition Mechanism for Phase-Change Memory.
Yoo, Chanyoung; Jeon, Jeong Woo; Yoon, Seungjae; Cheng, Yan; Han, Gyuseung; Choi, Wonho; Park, Byongwoo; Jeon, Gwangsik; Jeon, Sangmin; Kim, Woohyun; Zheng, Yonghui; Lee, Jongho; Ahn, Junku; Cho, Sunglae; Clendenning, Scott B; Karpov, Ilya V; Lee, Yoon Kyung; Choi, Jung-Hae; Hwang, Cheol Seong.
Afiliación
  • Yoo C; Department of Materials Science and Engineering, and Inter-University Semiconductor Research Center, Seoul National University, Seoul, 08826, Republic of Korea.
  • Jeon JW; Department of Materials Science and Engineering, and Inter-University Semiconductor Research Center, Seoul National University, Seoul, 08826, Republic of Korea.
  • Yoon S; Department of Materials Science and Engineering, and Inter-University Semiconductor Research Center, Seoul National University, Seoul, 08826, Republic of Korea.
  • Cheng Y; Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul, 02792, Republic of Korea.
  • Han G; Key Laboratory of Polar Materials and Devices, Department of Electronics, East China Normal University, Shanghai, 200241, China.
  • Choi W; Department of Materials Science and Engineering, and Inter-University Semiconductor Research Center, Seoul National University, Seoul, 08826, Republic of Korea.
  • Park B; Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul, 02792, Republic of Korea.
  • Jeon G; Department of Materials Science and Engineering, and Inter-University Semiconductor Research Center, Seoul National University, Seoul, 08826, Republic of Korea.
  • Jeon S; Department of Materials Science and Engineering, and Inter-University Semiconductor Research Center, Seoul National University, Seoul, 08826, Republic of Korea.
  • Kim W; Department of Materials Science and Engineering, and Inter-University Semiconductor Research Center, Seoul National University, Seoul, 08826, Republic of Korea.
  • Zheng Y; Department of Materials Science and Engineering, and Inter-University Semiconductor Research Center, Seoul National University, Seoul, 08826, Republic of Korea.
  • Lee J; Department of Materials Science and Engineering, and Inter-University Semiconductor Research Center, Seoul National University, Seoul, 08826, Republic of Korea.
  • Ahn J; Key Laboratory of Polar Materials and Devices, Department of Electronics, East China Normal University, Shanghai, 200241, China.
  • Cho S; SK Hynix Inc., Icheon, Gyeonggi, 17336, Republic of Korea.
  • Clendenning SB; SK Hynix Inc., Icheon, Gyeonggi, 17336, Republic of Korea.
  • Karpov IV; SK Hynix Inc., Icheon, Gyeonggi, 17336, Republic of Korea.
  • Lee YK; Components Research, Intel Corporation, Hillsboro, OR, 97124, USA.
  • Choi JH; Components Research, Intel Corporation, Hillsboro, OR, 97124, USA.
  • Hwang CS; Division of Advanced Materials Engineering, Jeonbuk National University, Jeonju, Jeonbuk, 54896, Republic of Korea.
Adv Mater ; 34(50): e2207143, 2022 Dec.
Article en En | MEDLINE | ID: mdl-36271720
Atomic layer deposition (ALD) of Sb2 Te3 /GeTe superlattice (SL) film on planar and vertical sidewall areas containing TiN metal and SiO2 insulator is demonstrated. The peculiar chemical affinity of the ALD precursor to the substrate surface and the 2D nature of the Sb2 Te3 enable the growth of an in situ crystallized SL film with a preferred orientation. The SL film shows a reduced reset current of ≈1/7 of the randomly oriented Ge2 Sb2 Te5 alloy. The reset switching is induced by the transition from the SL to the (111)-oriented face-centered-cubic (FCC) Ge2 Sb2 Te5 alloy and subsequent melt-quenching-free amorphization. The in-plane compressive stress, induced by the SL-to-FCC structural transition, enhances the electromigration of Ge along the [111] direction of FCC structure, which enables such a significant improvement. Set operation switches the amorphous to the (111)-oriented FCC structure.
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Adv Mater Asunto de la revista: BIOFISICA / QUIMICA Año: 2022 Tipo del documento: Article Pais de publicación: Alemania
Texto completo
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Adv Mater Asunto de la revista: BIOFISICA / QUIMICA Año: 2022 Tipo del documento: Article Pais de publicación: Alemania