Mixed-Substituted Single-Source Precursors for Si1-xGex Thin Film Deposition.

Köstler, Benedikt; Jungwirth, Felix; Achenbach, Luisa; Sistani, Masiar; Bolte, Michael; Lerner, Hans-Wolfram; Albert, Philipp; Wagner, Matthias; Barth, Sven

Mixed-Substituted Single-Source Precursors for Si_1-xGe_x Thin Film Deposition.

Köstler, Benedikt; Jungwirth, Felix; Achenbach, Luisa; Sistani, Masiar; Bolte, Michael; Lerner, Hans-Wolfram; Albert, Philipp; Wagner, Matthias; Barth, Sven.

Afiliación

Köstler B; Institute for Inorganic and Analytical Chemistry, Goethe University Frankfurt, Max-von-Laue-Str. 7, 60438 Frankfurt, Germany.
Jungwirth F; Physical Institute, Goethe University Frankfurt, Max-von-Laue-Str. 1, 60438 Frankfurt, Germany.
Achenbach L; Institute for Inorganic and Analytical Chemistry, Goethe University Frankfurt, Max-von-Laue-Str. 7, 60438 Frankfurt, Germany.
Sistani M; Institute of Solid State Electronics, TU Wien, Gußhausstraße 25-25a, 1040 Vienna, Austria.
Bolte M; Institute for Inorganic and Analytical Chemistry, Goethe University Frankfurt, Max-von-Laue-Str. 7, 60438 Frankfurt, Germany.
Lerner HW; Institute for Inorganic and Analytical Chemistry, Goethe University Frankfurt, Max-von-Laue-Str. 7, 60438 Frankfurt, Germany.
Albert P; Smart Materials, Evonik Operations GmbH, Untere Kanalstraße 3, 79618 Rheinfelden, Germany.
Wagner M; Institute for Inorganic and Analytical Chemistry, Goethe University Frankfurt, Max-von-Laue-Str. 7, 60438 Frankfurt, Germany.
Barth S; Physical Institute, Goethe University Frankfurt, Max-von-Laue-Str. 1, 60438 Frankfurt, Germany.

Inorg Chem ; 61(43): 17248-17255, 2022 Oct 31.

Article en En | MEDLINE | ID: mdl-36260357

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Inorg Chem Año: 2022 Tipo del documento: Article País de afiliación: Alemania Pais de publicación: Estados Unidos

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