Investigation and direct observation of sidewall leakage current of InGaN-Based green micro-light-emitting diodes.
Opt Express
; 30(12): 21065-21074, 2022 Jun 06.
Article
en En
| MEDLINE
| ID: mdl-36224835
Electrical and optical characteristics of InGaN-based green micro-light-emitting diodes (µLEDs) with different active areas are investigated; results are as follows. Reverse and forward leakage currents of µLED increase as emission area is reduced owing to the non-radiative recombination process at the sidewall defects; this is more prominent in smaller µLED because of larger surface-to-volume ratio. Leakage currents of µLEDs deteriorate the carrier injection to light-emitting quantum wells, thereby degrading their external quantum efficiency. Reverse leakage current originate primarily from sidewall edges of the smallest device. Therefore, aggressive suppression of sidewall defects of µLEDs is essential for low-power and downscaled µLEDs.
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1
Colección:
01-internacional
Base de datos:
MEDLINE
Idioma:
En
Revista:
Opt Express
Asunto de la revista:
OFTALMOLOGIA
Año:
2022
Tipo del documento:
Article
Pais de publicación:
Estados Unidos