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Optoelectronics of Atomic Metal-Semiconductor Interfaces in Tin-Intercalated MoS2.
Twitto, Avraham; Stern, Chen; Poplinger, Michal; Perelshtein, Ilana; Saha, Sabyasachi; Jain, Akash; Koski, Kristie J; Deepak, Francis Leonard; Ramasubramaniam, Ashwin; Naveh, Doron.
Afiliación
  • Twitto A; Faculty of Engineering, Bar-Ilan University, Ramat Gan52900, Israel.
  • Stern C; Institute for Nanotechnology and Advanced Materials, Bar-Ilan University, Ramat Gan52900, Israel.
  • Poplinger M; Faculty of Engineering, Bar-Ilan University, Ramat Gan52900, Israel.
  • Perelshtein I; Institute for Nanotechnology and Advanced Materials, Bar-Ilan University, Ramat Gan52900, Israel.
  • Saha S; Faculty of Engineering, Bar-Ilan University, Ramat Gan52900, Israel.
  • Jain A; Institute for Nanotechnology and Advanced Materials, Bar-Ilan University, Ramat Gan52900, Israel.
  • Koski KJ; Institute for Nanotechnology and Advanced Materials, Bar-Ilan University, Ramat Gan52900, Israel.
  • Deepak FL; Nanostructured Materials Group, International Iberian Nanotechnology Laboratory, Braga4715-330, Portugal.
  • Ramasubramaniam A; CEMES-CNRS, 29 Rue Jeanne Marvig, 31055Toulouse, France.
  • Naveh D; Department of Chemical Engineering, University of Massachusetts, Amherst, Massachusetts01003, United States.
ACS Nano ; 16(10): 17080-17086, 2022 Oct 25.
Article en En | MEDLINE | ID: mdl-36223602
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: ACS Nano Año: 2022 Tipo del documento: Article País de afiliación: Israel Pais de publicación: Estados Unidos
Texto completo
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: ACS Nano Año: 2022 Tipo del documento: Article País de afiliación: Israel Pais de publicación: Estados Unidos