Your browser doesn't support javascript.
loading
A ZnO/porous GaN heterojunction and its application as a humidity sensor.
Wang, Chao; Huang, Hui; Zhang, Miao-Rong; Song, Wei-Xing; Zhang, Long; Xi, Rui; Wang, Lu-Jia; Pan, Ge-Bo.
Afiliación
  • Wang C; Division of Interdisciplinary Research, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences 215123 Suzhou P. R. China gbpan2008@sinano.ac.cn.
  • Huang H; School of Nano Technology and Nano Bionics, University of Science and Technology of China 230026 Hefei P. R. China.
  • Zhang MR; Division of Interdisciplinary Research, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences 215123 Suzhou P. R. China gbpan2008@sinano.ac.cn.
  • Song WX; School of Nano Technology and Nano Bionics, University of Science and Technology of China 230026 Hefei P. R. China.
  • Zhang L; Division of Interdisciplinary Research, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences 215123 Suzhou P. R. China gbpan2008@sinano.ac.cn.
  • Xi R; Department of Chemistry, Capital Normal University 100048 Beijing P. R. China songwx@cnu.edu.cn.
  • Wang LJ; Division of Interdisciplinary Research, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences 215123 Suzhou P. R. China gbpan2008@sinano.ac.cn.
  • Pan GB; Division of Interdisciplinary Research, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences 215123 Suzhou P. R. China gbpan2008@sinano.ac.cn.
Nanoscale Adv ; 1(3): 1232-1239, 2019 Mar 12.
Article en En | MEDLINE | ID: mdl-36133180
A heterojunction of ZnO/porous GaN (ZnO/PGAN) was fabricated and directly applied to a diode-type humidity sensor. ZnO disks were loaded onto PGAN using a spraying process. The structure and surface morphology of the ZnO/PGAN were characterized using X-ray diffraction and scanning electron microscopy. The heterojunction displayed an excellent diode nature, which was investigated using photoluminescence spectra and I-V characteristics. The excellent transport capability of ZnO/PGAN contributes to enhanced electron transfer, and hence results in high sensitivity and quick response/recovery properties under different relative humidity (RH) levels. In the range of 12-96% RH, a fast sensing response time as low as 7 s and a recovery time of 13 s can be achieved. The simple design of a ZnO/PGAN based humidity sensor highlights its potential in various applications.
Texto completo
Añadir a Mi BVS
Imprimir
XML
PubMed Links
Buscar en Google

Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Nanoscale Adv Año: 2019 Tipo del documento: Article Pais de publicación: Reino Unido
Texto completo
Añadir a Mi BVS
Imprimir
XML
PubMed Links
Buscar en Google

Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Nanoscale Adv Año: 2019 Tipo del documento: Article Pais de publicación: Reino Unido