Hexagonal silicon-germanium nanowire branches with tunable composition.

Li, A; Hauge, H I T; Verheijen, M A; Bakkers, E P A M; Tucker, R T; Vincent, L; Renard, C

Li, A; Hauge, H I T; Verheijen, M A; Bakkers, E P A M; Tucker, R T; Vincent, L; Renard, C.

Afiliación

Li A; Department of Applied Physics, TU Eindhoven, Den Dolech 2, 5612 AZ Eindhoven, The Netherlands.
Hauge HIT; Department of Applied Physics, TU Eindhoven, Den Dolech 2, 5612 AZ Eindhoven, The Netherlands.
Verheijen MA; Department of Applied Physics, TU Eindhoven, Den Dolech 2, 5612 AZ Eindhoven, The Netherlands.
Bakkers EPAM; Eurofins Materials Science, High Tech Campus 11, 5656 AE Eindhoven, The Netherlands.
Tucker RT; Department of Applied Physics, TU Eindhoven, Den Dolech 2, 5612 AZ Eindhoven, The Netherlands.
Vincent L; Department of Applied Physics, TU Eindhoven, Den Dolech 2, 5612 AZ Eindhoven, The Netherlands.
Renard C; Department of Electrical & Computer Engineering, University of Alberta, Edmonton, Alberta T6G 2V4, Canada.

Nanotechnology ; 34(1)2022 Oct 12.

Article en En | MEDLINE | ID: mdl-36126589

Palabras clave

2H; SiGe; crystal growth; hexagonal; nanowire

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Nanotechnology Año: 2022 Tipo del documento: Article País de afiliación: Países Bajos Pais de publicación: Reino Unido

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