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Intrinsic (Trap-Free) Transistors Based on Epitaxial Single-Crystal Perovskites.
Bruevich, Vladimir; Kasaei, Leila; Rangan, Sylvie; Hijazi, Hussein; Zhang, Zhenyuan; Emge, Thomas; Andrei, Eva Y; Bartynski, Robert A; Feldman, Leonard C; Podzorov, Vitaly.
Afiliación
  • Bruevich V; Dept. of Physics and Astronomy, Rutgers University, 136 Frelinghuysen Road, Piscataway, NJ, 08854, USA.
  • Kasaei L; Dept. of Physics and Astronomy, Rutgers University, 136 Frelinghuysen Road, Piscataway, NJ, 08854, USA.
  • Rangan S; Dept. of Physics and Astronomy, Rutgers University, 136 Frelinghuysen Road, Piscataway, NJ, 08854, USA.
  • Hijazi H; Dept. of Physics and Astronomy, Rutgers University, 136 Frelinghuysen Road, Piscataway, NJ, 08854, USA.
  • Zhang Z; Dept. of Physics and Astronomy, Rutgers University, 136 Frelinghuysen Road, Piscataway, NJ, 08854, USA.
  • Emge T; Wright-Rieman Laboratories, Rutgers University, 610 Taylor Road, Piscataway, NJ, 08854, USA.
  • Andrei EY; Dept. of Physics and Astronomy, Rutgers University, 136 Frelinghuysen Road, Piscataway, NJ, 08854, USA.
  • Bartynski RA; Dept. of Physics and Astronomy, Rutgers University, 136 Frelinghuysen Road, Piscataway, NJ, 08854, USA.
  • Feldman LC; Dept. of Physics and Astronomy, Rutgers University, 136 Frelinghuysen Road, Piscataway, NJ, 08854, USA.
  • Podzorov V; Dept. of Physics and Astronomy, Rutgers University, 136 Frelinghuysen Road, Piscataway, NJ, 08854, USA.
Adv Mater ; 34(43): e2205055, 2022 Oct.
Article en En | MEDLINE | ID: mdl-36026556
The first experimental realization of the intrinsic (not dominated by defects) charge conduction regime in lead-halide perovskite field-effect transistors (FETs) is reported. The advance is enabled by: i) a new vapor-phase epitaxy technique that results in large-area single-crystalline cesium lead bromide (CsPbBr3 ) films with excellent structural and surface properties, including atomically flat surface morphology, essentially free from defects and traps at the level relevant to device operation; ii) an extensive materials analysis of these films using a variety of thin-film and surface probes certifying the chemical and structural quality of the material; and iii) the fabrication of nearly ideal (trap-free) FETs with characteristics superior to any reported to date. These devices allow the investigation of the intrinsic FET and (gated) Hall-effect carrier mobilities as functions of temperature. The intrinsic mobility is found to increase on cooling from ≈30 cm2 V-1 s-1 at room temperature to ≈250 cm2 V-1 s-1 at 50 K, revealing a band transport limited by phonon scattering. Establishing the intrinsic (phonon-limited) mobility provides a solid test for theoretical descriptions of carrier transport in perovskites, reveals basic limits to the technology, and points to a path for future high-performance perovskite electronic devices.
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Adv Mater Asunto de la revista: BIOFISICA / QUIMICA Año: 2022 Tipo del documento: Article País de afiliación: Estados Unidos Pais de publicación: Alemania
Texto completo
Añadir a Mi BVS
Imprimir
XML
PubMed Links
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Adv Mater Asunto de la revista: BIOFISICA / QUIMICA Año: 2022 Tipo del documento: Article País de afiliación: Estados Unidos Pais de publicación: Alemania