Life on the Urbach Edge.

Ugur, Esma; Ledinský, Martin; Allen, Thomas G; Holovský, Jakub; Vlk, Ales; De Wolf, Stefaan

Ugur, Esma; Ledinský, Martin; Allen, Thomas G; Holovský, Jakub; Vlk, Ales; De Wolf, Stefaan.

Afiliación

Ugur E; King Abdullah University of Science and Technology (KAUST), KAUST Solar Center (KSC), Physical Sciences and Engineering Division (PSE), Thuwal, 23955-6900, Kingdom of Saudi Arabia.
Ledinský M; Laboratory of Nanostructures and Nanomaterials, Institute of Physics, Academy of Sciences of the Czech Republic, v. v. i., Cukrovarnická 10, Prague, 162 00, Czech Republic.
Allen TG; King Abdullah University of Science and Technology (KAUST), KAUST Solar Center (KSC), Physical Sciences and Engineering Division (PSE), Thuwal, 23955-6900, Kingdom of Saudi Arabia.
Holovský J; Centre for Advanced Photovoltaics, Czech Technical University in Prague, Faculty of Electrical Engineering, Technická 2, Prague, 166 27, Czech Republic.
Vlk A; Laboratory of Nanostructures and Nanomaterials, Institute of Physics, Academy of Sciences of the Czech Republic, v. v. i., Cukrovarnická 10, Prague, 162 00, Czech Republic.
De Wolf S; King Abdullah University of Science and Technology (KAUST), KAUST Solar Center (KSC), Physical Sciences and Engineering Division (PSE), Thuwal, 23955-6900, Kingdom of Saudi Arabia.

J Phys Chem Lett ; 13(33): 7702-7711, 2022 Aug 25.

Article en En | MEDLINE | ID: mdl-35960888

RESUMEN

The Urbach energy is an expression of the static and dynamic disorder in a semiconductor and is directly accessible via optical characterization techniques. The strength of this metric is that it elegantly captures the optoelectronic performance potential of a semiconductor in a single number. For solar cells, the Urbach energy is found to be predictive of a material's minimal open-circuit-voltage deficit. Performance calculations considering the Urbach energy give more realistic power conversion efficiency limits than from classical Shockley-Queisser considerations. The Urbach energy is often also found to correlate well with the Stokes shift and (inversely) with the carrier mobility of a semiconductor. Here, we discuss key features, underlying physics, measurement techniques, and implications for device fabrication, underlining the utility of this metric.

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: J Phys Chem Lett Año: 2022 Tipo del documento: Article Pais de publicación: Estados Unidos

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