Solid Phase Epitaxy of Single Phase Two-Dimensional Layered InSe Grown by MBE.

Wu, Chia-Hsing; Huang, Yu-Che; Ho, Yen-Teng; Chang, Shu-Jui; Wu, Ssu-Kuan; Huang, Ci-Hao; Chou, Wu-Ching; Yang, Chu-Shou

Wu, Chia-Hsing; Huang, Yu-Che; Ho, Yen-Teng; Chang, Shu-Jui; Wu, Ssu-Kuan; Huang, Ci-Hao; Chou, Wu-Ching; Yang, Chu-Shou.

Afiliación

Wu CH; International College of Semiconductor Technology, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan.
Huang YC; International College of Semiconductor Technology, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan.
Ho YT; International College of Semiconductor Technology, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan.
Chang SJ; International College of Semiconductor Technology, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan.
Wu SK; Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan.
Huang CH; Department of Electrical Engineering, Tatung University, Taipei 10452, Taiwan.
Chou WC; Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan.
Yang CS; Department of Electrical Engineering, Tatung University, Taipei 10452, Taiwan.

Nanomaterials (Basel) ; 12(14)2022 Jul 15.

Article en En | MEDLINE | ID: mdl-35889659

Palabras clave

In2Se3; InSe; MBE; solid-phase epitaxy

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Nanomaterials (Basel) Año: 2022 Tipo del documento: Article País de afiliación: Taiwán Pais de publicación: Suiza

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