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Hydrogen-Induced Conversion of SnS2 into SnS or Sn: A Route to Create SnS2 /SnS Heterostructures.
Felton, James; Blundo, Elena; Kudrynskyi, Zakhar; Ling, Sanliang; Bradford, Jonathan; Pettinari, Giorgio; Cooper, Timothy; Wadge, Matthew; Kovalyuk, Zakhar; Polimeni, Antonio; Beton, Peter; Grant, David; Walker, Gavin; Patanè, Amalia.
Afiliación
  • Felton J; School of Physics and Astronomy, University of Nottingham, Nottingham, NG7 2RD, UK.
  • Blundo E; Dipartimento di Fisica, Sapienza Universitä di Roma, Roma, 00185, Italy.
  • Kudrynskyi Z; School of Physics and Astronomy, University of Nottingham, Nottingham, NG7 2RD, UK.
  • Ling S; Advanced Materials Research Group, Faculty of Engineering, University of Nottingham, Nottingham, NG7 2RD, UK.
  • Bradford J; School of Physics and Astronomy, University of Nottingham, Nottingham, NG7 2RD, UK.
  • Pettinari G; Institute for Photonics and Nanotechnologies (CNR-IFN), National Research Council, Rome, 00156, Italy.
  • Cooper T; Advanced Materials Research Group, Faculty of Engineering, University of Nottingham, Nottingham, NG7 2RD, UK.
  • Wadge M; Advanced Materials Research Group, Faculty of Engineering, University of Nottingham, Nottingham, NG7 2RD, UK.
  • Kovalyuk Z; Institute for Problems of Materials Science, National Academy of Sciences of Ukraine, Chernivtsi Branch, Chernivtsi, 58001, Ukraine.
  • Polimeni A; Dipartimento di Fisica, Sapienza Universitä di Roma, Roma, 00185, Italy.
  • Beton P; School of Physics and Astronomy, University of Nottingham, Nottingham, NG7 2RD, UK.
  • Grant D; Advanced Materials Research Group, Faculty of Engineering, University of Nottingham, Nottingham, NG7 2RD, UK.
  • Walker G; Advanced Materials Research Group, Faculty of Engineering, University of Nottingham, Nottingham, NG7 2RD, UK.
  • Patanè A; School of Physics and Astronomy, University of Nottingham, Nottingham, NG7 2RD, UK.
Small ; 18(33): e2202661, 2022 Aug.
Article en En | MEDLINE | ID: mdl-35863913
The family of van der Waals (vdW) materials is large and diverse with applications ranging from electronics and optoelectronics to catalysis and chemical storage. However, despite intensive research, there remains significant knowledge-gaps pertaining to their properties and interactions. One such gap is the interaction between these materials and hydrogen, a potentially vital future energy vector and ubiquitous processing gas in the semiconductor industry. This work reports on the interaction of hydrogen with the vdW semiconductor SnS2 , where molecular hydrogen (H2 ) and H-ions induce a controlled chemical conversion into semiconducting-SnS or to ß-Sn. This hydrogen-driven reaction is facilitated by the different oxidation states of Sn and is successfully applied to form SnS2 /SnS heterostructures with uniform layers, atomically flat interfaces and well-aligned crystallographic axes. This approach is scalable and offers a route for engineering materials at the nanoscale for semiconductor technologies based on the earth-abundant elements Sn and S, a promising result for a wide range of potential applications.
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Small Asunto de la revista: ENGENHARIA BIOMEDICA Año: 2022 Tipo del documento: Article Pais de publicación: Alemania
Texto completo
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Small Asunto de la revista: ENGENHARIA BIOMEDICA Año: 2022 Tipo del documento: Article Pais de publicación: Alemania