Electron-phonon relaxation at the Au/WSe<sub>2</sub> interface is significantly accelerated by a Ti adhesion layer: time-domain <i>ab initio</i> analysis.

Lu, Teng-Fei; Gumber, Shriya; Tokina, Marina V; Tomko, John A; Hopkins, Patrick E; Prezhdo, Oleg V

Electron-phonon relaxation at the Au/WSe₂ interface is significantly accelerated by a Ti adhesion layer: time-domain ab initio analysis.

Lu, Teng-Fei; Gumber, Shriya; Tokina, Marina V; Tomko, John A; Hopkins, Patrick E; Prezhdo, Oleg V.

Afiliación

Lu TF; School of Materials Science and Engineering, Dalian Jiaotong University, Dalian 116028, Liaoning Province, China.
Gumber S; Department of Chemistry, University of Southern California, Los Angeles, CA 90089, USA. prezhdo@usc.edu.
Tokina MV; Department of Chemistry, University of Southern California, Los Angeles, CA 90089, USA. prezhdo@usc.edu.
Tomko JA; Department of Mechanical and Aerospace Engineering, University of Virginia, Charlottesville, VA 22904, USA.
Hopkins PE; Department of Mechanical and Aerospace Engineering, University of Virginia, Charlottesville, VA 22904, USA.
Prezhdo OV; Department of Materials Science and Engineering, University of Virginia, Charlottesville, VA 22904, USA.

Nanoscale ; 14(29): 10514-10523, 2022 Jul 28.

Article en En | MEDLINE | ID: mdl-35833340

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Nanoscale Año: 2022 Tipo del documento: Article País de afiliación: China Pais de publicación: Reino Unido

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