Medium-Temperature-Oxidized GeO<sub>x</sub> Resistive-Switching Random-Access Memory and Its Applicability in Processing-in-Memory Computing.

Udaya Mohanan, Kannan; Cho, Seongjae; Park, Byung-Gook

Medium-Temperature-Oxidized GeO_x Resistive-Switching Random-Access Memory and Its Applicability in Processing-in-Memory Computing.

Udaya Mohanan, Kannan; Cho, Seongjae; Park, Byung-Gook.

Afiliación

Udaya Mohanan K; Department of Electronic Engineering and College of IT Convergence Engineering, Gachon University, Seongnam-si, Gyeonggi-do, 13120, Republic of Korea.
Cho S; Department of Electronic Engineering and College of IT Convergence Engineering, Gachon University, Seongnam-si, Gyeonggi-do, 13120, Republic of Korea. felixcho@gachon.ac.kr.
Park BG; Department of Electrical and Computer Engineering with Inter-university Semiconductor Research Center (ISRC), Seoul National University, Seoul, 08826, Republic of Korea.

Nanoscale Res Lett ; 17(1): 63, 2022 Jul 05.

Article en En | MEDLINE | ID: mdl-35789299

Palabras clave

Germanium oxide; Low-power hardware neural network; Medium-temperature oxidation; Processing-in-memory (PIM); Resistive-switching random-access memory (ReRAM)

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Tipo de estudio: Clinical_trials Idioma: En Revista: Nanoscale Res Lett Año: 2022 Tipo del documento: Article Pais de publicación: Estados Unidos

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