Unique Conduction Band Minimum of Semiconductors Possessing a Zincblende-Type Framework.

Mizoguchi, Hiroshi; Park, Sang-Won; Katase, Takayoshi; Yu, Jiahao; Wang, Junjie; Hosono, Hideo

Mizoguchi, Hiroshi; Park, Sang-Won; Katase, Takayoshi; Yu, Jiahao; Wang, Junjie; Hosono, Hideo.

Afiliación

Mizoguchi H; International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS)RINGGOLD, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan.
Park SW; International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS)RINGGOLD, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan.
Katase T; Materials Research Center for Element Strategy, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan.
Yu J; Department of Chemical and Materials Engineering, University of Suwon, Hwaseong, Gyeonggi 18323, Republic of Korea.
Wang J; Laboratory for Materials and Structures, Institute of Innovative Research, Tokyo Institute of Technology, Yokohama 226-8503, Japan.
Hosono H; State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi'an, Shaanxi 710072, People's Republic of China.

Inorg Chem ; 61(27): 10359-10364, 2022 Jul 11.

Article en En | MEDLINE | ID: mdl-35762337

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Inorg Chem Año: 2022 Tipo del documento: Article País de afiliación: Japón Pais de publicación: Estados Unidos

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