Your browser doesn't support javascript.
loading
Highly heterogeneous epitaxy of flexoelectric BaTiO3-δ membrane on Ge.
Dai, Liyan; Zhao, Jinyan; Li, Jingrui; Chen, Bohan; Zhai, Shijie; Xue, Zhongying; Di, Zengfeng; Feng, Boyuan; Sun, Yanxiao; Luo, Yunyun; Ma, Ming; Zhang, Jie; Ding, Sunan; Zhao, Libo; Jiang, Zhuangde; Luo, Wenbo; Quan, Yi; Schwarzkopf, Jutta; Schroeder, Thomas; Ye, Zuo-Guang; Xie, Ya-Hong; Ren, Wei; Niu, Gang.
Afiliación
  • Dai L; Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering & The International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology, Xi'an Jiaotong Univ
  • Zhao J; Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering & The International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology, Xi'an Jiaotong Univ
  • Li J; Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering & The International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology, Xi'an Jiaotong Univ
  • Chen B; Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering & The International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology, Xi'an Jiaotong Univ
  • Zhai S; Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering & The International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology, Xi'an Jiaotong Univ
  • Xue Z; State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Science, Shanghai, 200050, China.
  • Di Z; State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Science, Shanghai, 200050, China.
  • Feng B; Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, 215123, China.
  • Sun Y; Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering & The International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology, Xi'an Jiaotong Univ
  • Luo Y; The State Key Laboratory for Manufacturing Systems Engineering & The International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology, Xi'an Jiaotong University, Xi'an, 710049, China.
  • Ma M; Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering & The International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology, Xi'an Jiaotong Univ
  • Zhang J; Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering & The International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology, Xi'an Jiaotong Univ
  • Ding S; Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, 215123, China.
  • Zhao L; The State Key Laboratory for Manufacturing Systems Engineering & The International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology, Xi'an Jiaotong University, Xi'an, 710049, China.
  • Jiang Z; The State Key Laboratory for Manufacturing Systems Engineering & The International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology, Xi'an Jiaotong University, Xi'an, 710049, China.
  • Luo W; State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 611731, China.
  • Quan Y; Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering & The International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology, Xi'an Jiaotong Univ
  • Schwarzkopf J; School of Microelectronics, Xidian University, Xi'an, 710071, China.
  • Schroeder T; Leibniz-Institut für Kristallzüchtung, Max-Born-Straße 2, Berlin, 12489, Germany.
  • Ye ZG; Leibniz-Institut für Kristallzüchtung, Max-Born-Straße 2, Berlin, 12489, Germany.
  • Xie YH; Department of Chemistry and 4D LABS, Simon Fraser University, Burnaby, BC, V5A 1S6, Canada.
  • Ren W; Department of Materials Science and Engineering, University of California, Los Angeles, CA, 90095, USA.
  • Niu G; Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering & The International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology, Xi'an Jiaotong Univ
Nat Commun ; 13(1): 2990, 2022 May 30.
Article en En | MEDLINE | ID: mdl-35637222

Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Nat Commun Asunto de la revista: BIOLOGIA / CIENCIA Año: 2022 Tipo del documento: Article Pais de publicación: Reino Unido

Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Nat Commun Asunto de la revista: BIOLOGIA / CIENCIA Año: 2022 Tipo del documento: Article Pais de publicación: Reino Unido