Indirect Measurement of Electron Energy Relaxation Time at Room Temperature in Two-Dimensional Heterostructured Semiconductors.

Suziedelis, Algirdas; Asmontas, Steponas; Gradauskas, Jonas; Cerskus, Aurimas; Anbinderis, Maksimas

Suziedelis, Algirdas; Asmontas, Steponas; Gradauskas, Jonas; Cerskus, Aurimas; Anbinderis, Maksimas.

Afiliación

Suziedelis A; Center for Physical Sciences and Technology, Savanoriu ave. 231, 02300 Vilnius, Lithuania.
Asmontas S; Center for Physical Sciences and Technology, Savanoriu ave. 231, 02300 Vilnius, Lithuania.
Gradauskas J; Center for Physical Sciences and Technology, Savanoriu ave. 231, 02300 Vilnius, Lithuania.
Cerskus A; Vilnius Gediminas Technical University, Sauletekio ave. 11, 10223 Vilnius, Lithuania.
Anbinderis M; Center for Physical Sciences and Technology, Savanoriu ave. 231, 02300 Vilnius, Lithuania.

Materials (Basel) ; 15(9)2022 Apr 29.

Article en En | MEDLINE | ID: mdl-35591557

Palabras clave

I-V characteristic; electron energy relaxation time; microwave diode; quantum well; two-dimensional electron gas; voltage sensitivity

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Tipo de estudio: Prognostic_studies Idioma: En Revista: Materials (Basel) Año: 2022 Tipo del documento: Article País de afiliación: Lituania Pais de publicación: Suiza

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