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Homogeneity and tolerance to heat of monolayer MoS2 on SiO2 and h-BN.
Kim, Ho-Jong; Kim, Daehee; Jung, Suyong; Bae, Myung-Ho; Yi, Sam Nyung; Watanabe, Kenji; Taniguchi, Takashi; Chang, Soo Kyung; Ha, Dong Han.
Afiliación
  • Kim HJ; Quantum Technology Institute, Korea Research Institute of Standards and Science Daejeon 34113 Republic of Korea dhha@kriss.re.kr.
  • Kim D; Department of Physics, Yonsei University Seoul 03722 Republic of Korea.
  • Jung S; Quantum Technology Institute, Korea Research Institute of Standards and Science Daejeon 34113 Republic of Korea dhha@kriss.re.kr.
  • Bae MH; Quantum Technology Institute, Korea Research Institute of Standards and Science Daejeon 34113 Republic of Korea dhha@kriss.re.kr.
  • Yi SN; Quantum Technology Institute, Korea Research Institute of Standards and Science Daejeon 34113 Republic of Korea dhha@kriss.re.kr.
  • Watanabe K; Department of Electronic Material Engineering, Korea Maritime and Ocean University Busan 49112 Republic of Korea.
  • Taniguchi T; National Institute for Materials Science 1-1 Namiki Tsukuba 305-0044 Japan.
  • Chang SK; National Institute for Materials Science 1-1 Namiki Tsukuba 305-0044 Japan.
  • Ha DH; Department of Physics, Yonsei University Seoul 03722 Republic of Korea.
RSC Adv ; 8(23): 12900-12906, 2018 Apr 03.
Article en En | MEDLINE | ID: mdl-35541259
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: RSC Adv Año: 2018 Tipo del documento: Article Pais de publicación: Reino Unido
Texto completo
Añadir a Mi BVS
Imprimir
XML
PubMed Links
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: RSC Adv Año: 2018 Tipo del documento: Article Pais de publicación: Reino Unido