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Photoluminescence Induced by Substitutional Nitrogen in Single-Layer Tungsten Disulfide.
Qian, Qingkai; Wu, Wenjing; Peng, Lintao; Wang, Yuanxi; Tan, Anne Marie Z; Liang, Liangbo; Hus, Saban M; Wang, Ke; Choudhury, Tanushree H; Redwing, Joan M; Puretzky, Alexander A; Geohegan, David B; Hennig, Richard G; Ma, Xuedan; Huang, Shengxi.
Afiliación
  • Qian Q; Key Laboratory of Optoelectronic Technology and System (Ministry of Education), College of Optoelectronic Engineering, Chongqing University, Chongqing 400044, China.
  • Wu W; Department of Electrical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States.
  • Peng L; Department of Electrical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States.
  • Wang Y; Center for Nanoscale Materials, Argonne National Laboratory, Argonne, Illinois 60439, United States.
  • Tan AMZ; Department of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, United States.
  • Liang L; Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611, United States.
  • Hus SM; School of Mechanical and Aerospace Engineering, Nanyang Technological University, Singapore 639798, Singapore.
  • Wang K; Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States.
  • Choudhury TH; Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States.
  • Redwing JM; Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802, United States.
  • Puretzky AA; 2D Crystal Consortium, Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802, United States.
  • Geohegan DB; 2D Crystal Consortium, Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802, United States.
  • Hennig RG; Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States.
  • Ma X; Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States.
  • Huang S; Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States.
ACS Nano ; 16(5): 7428-7437, 2022 May 24.
Article en En | MEDLINE | ID: mdl-35536919
The electronic and optical properties of two-dimensional materials can be strongly influenced by defects, some of which can find significant implementations, such as controllable doping, prolonged valley lifetime, and single-photon emissions. In this work, we demonstrate that defects created by remote N2 plasma exposure in single-layer WS2 can induce a distinct low-energy photoluminescence (PL) peak at 1.59 eV, which is in sharp contrast to that caused by remote Ar plasma. This PL peak has a critical requirement on the N2 plasma exposure dose, which is strongest for WS2 with about 2.0% sulfur deficiencies (including substitutions and vacancies) and vanishes at 5.6% or higher sulfur deficiencies. Both experiments and first-principles calculations suggest that this 1.59 eV PL peak is caused by defects related to the sulfur substitutions by nitrogen, even though low-temperature PL measurements also reveal that not all the sulfur vacancies are remedied by the substitutional nitrogen. The distinct low-energy PL peak suggests that the substitutional nitrogen defect in single-layer WS2 can potentially serve as an isolated artificial atom for creating single-photon emitters, and its intensity can also be used to monitor the doping concentrations of substitutional nitrogen.
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: ACS Nano Año: 2022 Tipo del documento: Article País de afiliación: China Pais de publicación: Estados Unidos
Texto completo
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: ACS Nano Año: 2022 Tipo del documento: Article País de afiliación: China Pais de publicación: Estados Unidos