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Ultrathin ferroic HfO2-ZrO2 superlattice gate stack for advanced transistors.
Cheema, Suraj S; Shanker, Nirmaan; Wang, Li-Chen; Hsu, Cheng-Hsiang; Hsu, Shang-Lin; Liao, Yu-Hung; San Jose, Matthew; Gomez, Jorge; Chakraborty, Wriddhi; Li, Wenshen; Bae, Jong-Ho; Volkman, Steve K; Kwon, Daewoong; Rho, Yoonsoo; Pinelli, Gianni; Rastogi, Ravi; Pipitone, Dominick; Stull, Corey; Cook, Matthew; Tyrrell, Brian; Stoica, Vladimir A; Zhang, Zhan; Freeland, John W; Tassone, Christopher J; Mehta, Apurva; Saheli, Ghazal; Thompson, David; Suh, Dong Ik; Koo, Won-Tae; Nam, Kab-Jin; Jung, Dong Jin; Song, Woo-Bin; Lin, Chung-Hsun; Nam, Seunggeol; Heo, Jinseong; Parihar, Narendra; Grigoropoulos, Costas P; Shafer, Padraic; Fay, Patrick; Ramesh, Ramamoorthy; Mahapatra, Souvik; Ciston, Jim; Datta, Suman; Mohamed, Mohamed; Hu, Chenming; Salahuddin, Sayeef.
Afiliación
  • Cheema SS; Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA, USA. s.cheema@berkeley.edu.
  • Shanker N; Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, Berkeley, CA, USA.
  • Wang LC; Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA, USA.
  • Hsu CH; Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, Berkeley, CA, USA.
  • Hsu SL; Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, Berkeley, CA, USA.
  • Liao YH; Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, Berkeley, CA, USA.
  • San Jose M; Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN, USA.
  • Gomez J; Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN, USA.
  • Chakraborty W; Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN, USA.
  • Li W; Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, Berkeley, CA, USA.
  • Bae JH; Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, Berkeley, CA, USA.
  • Volkman SK; Applied Science and Technology, University of California, Berkeley, CA, USA.
  • Kwon D; Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, Berkeley, CA, USA.
  • Rho Y; Laser Thermal Laboratory, Department of Mechanical Engineering, University of California, Berkeley, CA, USA.
  • Pinelli G; Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA, USA.
  • Rastogi R; Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA, USA.
  • Pipitone D; Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA, USA.
  • Stull C; Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA, USA.
  • Cook M; Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA, USA.
  • Tyrrell B; Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA, USA.
  • Stoica VA; Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA, USA.
  • Zhang Z; Advanced Photon Source, Argonne National Laboratory, Lemont, IL, USA.
  • Freeland JW; Advanced Photon Source, Argonne National Laboratory, Lemont, IL, USA.
  • Tassone CJ; Stanford Synchrotron Radiation Lightsource, SLAC National Accelerator Laboratory, Menlo Park, CA, USA.
  • Mehta A; Stanford Synchrotron Radiation Lightsource, SLAC National Accelerator Laboratory, Menlo Park, CA, USA.
  • Saheli G; Applied Materials, Santa Clara, CA, USA.
  • Thompson D; Applied Materials, Santa Clara, CA, USA.
  • Suh DI; Research & Development Division, SK hynix, Icheon, Korea.
  • Koo WT; Research & Development Division, SK hynix, Icheon, Korea.
  • Nam KJ; Semiconductor R&D Center, Samsung Electronics, Gyeonggi-do, Korea.
  • Jung DJ; Semiconductor R&D Center, Samsung Electronics, Gyeonggi-do, Korea.
  • Song WB; Semiconductor R&D Center, Samsung Electronics, Gyeonggi-do, Korea.
  • Lin CH; Logic Technology Development, Intel Corporation, Hillsboro, OR, USA.
  • Nam S; Samsung Advanced Institute of Technology, Samsung Electronics, Suwon, Korea.
  • Heo J; Samsung Advanced Institute of Technology, Samsung Electronics, Suwon, Korea.
  • Parihar N; Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai, India.
  • Grigoropoulos CP; Laser Thermal Laboratory, Department of Mechanical Engineering, University of California, Berkeley, CA, USA.
  • Shafer P; Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA, USA.
  • Fay P; Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN, USA.
  • Ramesh R; Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA, USA.
  • Mahapatra S; Department of Physics, University of California, Berkeley, Berkeley, CA, USA.
  • Ciston J; Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA.
  • Datta S; Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai, India.
  • Mohamed M; National Center for Electron Microscopy, Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA, USA.
  • Hu C; Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN, USA.
  • Salahuddin S; Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA, USA.
Nature ; 604(7904): 65-71, 2022 04.
Article en En | MEDLINE | ID: mdl-35388197
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Nature Año: 2022 Tipo del documento: Article País de afiliación: Estados Unidos Pais de publicación: Reino Unido
Texto completo
Añadir a Mi BVS
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Nature Año: 2022 Tipo del documento: Article País de afiliación: Estados Unidos Pais de publicación: Reino Unido