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Photoelectrochemical Performance Improving Mechanism: Hybridization Appearing at the Energy Band of BiVO4 Photoanode by Doped Quantum Layers Modification.
Li, Yang; Dai, Xianying; Bu, Yuyu; Zhang, Hanzhi; Liu, Jie; Yuan, Wenyu; Guo, Xiaohui; Ao, Jin-Ping.
Afiliación
  • Li Y; Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an, 710071, China.
  • Dai X; Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an, 710071, China.
  • Bu Y; Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an, 710071, China.
  • Zhang H; Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an, 710071, China.
  • Liu J; Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an, 710071, China.
  • Yuan W; Key Laboratory of Macromolecular Science of Shaanxi Province, Key Laboratory of Applied Surface and Colloid Chemistry, School of Chemistry & Chemical Engineering, Shannxi Normal University, Xi'an, 710062, China.
  • Guo X; Key Laboratory of Synthetic and Natural Functional Molecule of the Ministry of Education, The College of Chemistry and Materials Science, Northwest University, Xi'an, 710061, China.
  • Ao JP; Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an, 710071, China.
Small ; 18(21): e2200454, 2022 May.
Article en En | MEDLINE | ID: mdl-35363421
Surface passivation of the photoelectrode by wide bandgap semiconductor quantum layer is an important strategy to improve work stability and surface state inhibition. However, an inevitable energy barrier is generated during the quantum tunneling process of the photocarriers. To overcome this shortage, a tandem photo-generated hole transfer route is fabricated on BiVO4 photoanode by doped dual-quantum layers modification, Ni-ZnO (5 nm) and Rh-SrTiO3 (≈10 nm). Modulated photoelectrochemical (PEC), Scanning Kelvin Probe (SKP), and DFT calculation method results indicate that a tandem hole ohmic contact route is formed in the photoanode to reduce the quantum tunneling energy barrier, meanwhile, the photon absorption capacity of BiVO4 is improved after doped quantum layers modification. Both a phenomenal attribute to the energy band hybridization between Ni, Rh 3d orbits in quantum layers with BiVO4 photoanode. Then, the modified BiVO4 photoanode achieves the recoded photocurrent density of 6.47 and 5.18 mA cm-2 (Na2 SO3 electrolyte, VRHE  = 1.23 V) under simulated sun light (100 mW cm-2 AM 1.5 G) by xenon lamp illumination without and with UV composition cutting down to ≈5%, respectively. Generally, this work will highlight a potential application in the fields of PEC water splitting and photovoltaic conversion for various semiconductor nanomaterials.
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Small Asunto de la revista: ENGENHARIA BIOMEDICA Año: 2022 Tipo del documento: Article País de afiliación: China Pais de publicación: Alemania
Texto completo
Añadir a Mi BVS
Imprimir
XML
PubMed Links
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Small Asunto de la revista: ENGENHARIA BIOMEDICA Año: 2022 Tipo del documento: Article País de afiliación: China Pais de publicación: Alemania