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Reply to: Detectivities of WS2/HfS2 heterojunctions.
Lukman, Steven; Ding, Lu; Xu, Lei; Tao, Ye; Riis-Jensen, Anders C; Zhang, Gang; Wu, Qingyang Steve; Yang, Ming; Luo, Sheng; Hsu, Chuanghan; Yao, Liangzi; Liang, Gengchiau; Lin, Hsin; Zhang, Yong-Wei; Thygesen, Kristian S; Wang, Qi Jie; Feng, Yuanping; Teng, Jinghua.
Afiliación
  • Lukman S; Institute of Materials Research and Engineering, Agency for Science, Technology and Research (A*STAR), Singapore, Singapore.
  • Ding L; Institute of Materials Research and Engineering, Agency for Science, Technology and Research (A*STAR), Singapore, Singapore.
  • Xu L; Department of Physics, National University of Singapore, Singapore, Singapore.
  • Tao Y; School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, Singapore.
  • Riis-Jensen AC; CAMD and Center for Nanostructured Graphene (CNG), Department of Physics, Technical University of Denmark, Kongens Lyngby, Denmark.
  • Zhang G; Institute of High Performance Computing, Agency for Science, Technology and Research (A*STAR), Singapore, Singapore.
  • Wu QS; Institute of Materials Research and Engineering, Agency for Science, Technology and Research (A*STAR), Singapore, Singapore.
  • Yang M; Institute of Materials Research and Engineering, Agency for Science, Technology and Research (A*STAR), Singapore, Singapore.
  • Luo S; Department of Physics, National University of Singapore, Singapore, Singapore.
  • Hsu C; Department of Electrical and Computer Engineering, Faculty of Engineering, National University of Singapore, Singapore, Singapore.
  • Yao L; Department of Electrical and Computer Engineering, Faculty of Engineering, National University of Singapore, Singapore, Singapore.
  • Liang G; Institute of Physics, Academia Sinica, Taipei, Taiwan.
  • Lin H; Department of Electrical and Computer Engineering, Faculty of Engineering, National University of Singapore, Singapore, Singapore.
  • Zhang YW; Institute of Physics, Academia Sinica, Taipei, Taiwan.
  • Thygesen KS; Institute of High Performance Computing, Agency for Science, Technology and Research (A*STAR), Singapore, Singapore.
  • Wang QJ; CAMD and Center for Nanostructured Graphene (CNG), Department of Physics, Technical University of Denmark, Kongens Lyngby, Denmark.
  • Feng Y; School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, Singapore.
  • Teng J; Department of Physics, National University of Singapore, Singapore, Singapore.
Nat Nanotechnol ; 17(3): 220-221, 2022 03.
Article en En | MEDLINE | ID: mdl-35273360
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Nat Nanotechnol Año: 2022 Tipo del documento: Article País de afiliación: Singapur Pais de publicación: Reino Unido
Texto completo
Añadir a Mi BVS
Imprimir
XML
PubMed Links
Buscar en Google

Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Nat Nanotechnol Año: 2022 Tipo del documento: Article País de afiliación: Singapur Pais de publicación: Reino Unido