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Large Transverse and Longitudinal Magneto-Thermoelectric Effect in Polycrystalline Nodal-Line Semimetal Mg3 Bi2.
Feng, Tao; Wang, Panshuo; Han, Zhijia; Zhou, Liang; Zhang, Wenqing; Liu, Qihang; Liu, Weishu.
Afiliación
  • Feng T; Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, 518055, China.
  • Wang P; Department of Physics and Shenzhen Institute for Quantum Science & Engineering, Southern University of Science and Technology, Shenzhen, 518055, China.
  • Han Z; Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, 518055, China.
  • Zhou L; Department of Physics and Shenzhen Institute for Quantum Science & Engineering, Southern University of Science and Technology, Shenzhen, 518055, China.
  • Zhang W; Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, 518055, China.
  • Liu Q; Department of Physics and Shenzhen Institute for Quantum Science & Engineering, Southern University of Science and Technology, Shenzhen, 518055, China.
  • Liu W; Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, 518055, China.
Adv Mater ; 34(19): e2200931, 2022 May.
Article en En | MEDLINE | ID: mdl-35262249
Topological semimetals provide new opportunities for exploring novel thermoelectric phenomena, owing to their exotic and nontrivial electronic structure topology around the Fermi surface. Herein, the discovery of large transverse and longitudinal magneto-thermoelectric (MTE) effects in Mg3 Bi2 is reported and predicted to be a type-II nodal-line semimetal in the absence of spin-orbit coupling (SOC). The maximum transverse power factor is 2182 µW m-1 K-2 at 13.5 K and 6 Tesla. The longitudinal power factor reaches up to 3043 µW m-1 K-2 , which is 20 times higher than that in a zero-strength magnetic field and is also comparable to state-of-the-art MTE materials. By compensating the Mg loss in Mg-rich conditions for tuning the carrier concentration close to intrinsic state, the sample fabricated in this study exhibits a large linear non-saturating magnetoresistance of 940% under a field of 14 Tesla. Using density functional calculations, the authors attribute the underlying mechanism to the parent linear-dispersed nodal-line electronic structure without SOC and the anisotropic Fermi surface shape with SOC, highlighting the essential role of high carrier mobility and open electron orbits in the moment space. This work offers a new avenue toward highly efficient MTE materials through defect engineering in polycrystalline topological semimetals.
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Tipo de estudio: Prognostic_studies / Risk_factors_studies Idioma: En Revista: Adv Mater Asunto de la revista: BIOFISICA / QUIMICA Año: 2022 Tipo del documento: Article País de afiliación: China Pais de publicación: Alemania
Texto completo
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Tipo de estudio: Prognostic_studies / Risk_factors_studies Idioma: En Revista: Adv Mater Asunto de la revista: BIOFISICA / QUIMICA Año: 2022 Tipo del documento: Article País de afiliación: China Pais de publicación: Alemania