Effectual Interface and Defect Engineering for Auger Recombination Suppression in Bright InP/ZnSeS/ZnS Quantum Dots.

Lee, YuJin; Jo, Dae-Yeon; Kim, Taehee; Jo, Jung-Ho; Park, Jumi; Yang, Heesun; Kim, Dongho

Lee, YuJin; Jo, Dae-Yeon; Kim, Taehee; Jo, Jung-Ho; Park, Jumi; Yang, Heesun; Kim, Dongho.

Afiliación

Lee Y; Department of Chemistry, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea.
Jo DY; Department of Materials Science and Engineering, Hongik University, 94 Wausan-ro, Mapo-gu, Seoul 04066, Republic of Korea.
Kim T; Department of Chemistry, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea.
Jo JH; Department of Materials Science and Engineering, Hongik University, 94 Wausan-ro, Mapo-gu, Seoul 04066, Republic of Korea.
Park J; Department of Chemistry, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea.
Yang H; Department of Materials Science and Engineering, Hongik University, 94 Wausan-ro, Mapo-gu, Seoul 04066, Republic of Korea.
Kim D; Department of Chemistry, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea.

ACS Appl Mater Interfaces ; 14(10): 12479-12487, 2022 Mar 16.

Article en En | MEDLINE | ID: mdl-35238532

Palabras clave

InP quantum dots; auger recombination; confinement potential smoothing; gradient shell; lifetime blinking

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: ACS Appl Mater Interfaces Asunto de la revista: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Año: 2022 Tipo del documento: Article Pais de publicación: Estados Unidos

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