Optimization of Gate-All-Around Device to Achieve High Performance and Low Power with Low Substrate Leakage.

Yoo, Changhyun; Chang, Jeesoo; Park, Sugil; Kim, Hyungyeong; Jeon, Jongwook

Yoo, Changhyun; Chang, Jeesoo; Park, Sugil; Kim, Hyungyeong; Jeon, Jongwook.

Afiliación

Yoo C; Department of Electrical and Electronics Engineering, Konkuk University, Seoul 05029, Korea.
Chang J; Data and Information Tech. (DIT) Center, Samsung Electronics, Hwasung-Si 18448, Korea.
Park S; Department of Electrical and Electronics Engineering, Konkuk University, Seoul 05029, Korea.
Kim H; Department of Electrical and Electronics Engineering, Konkuk University, Seoul 05029, Korea.
Jeon J; Department of Electrical and Electronics Engineering, Konkuk University, Seoul 05029, Korea.

Nanomaterials (Basel) ; 12(4)2022 Feb 09.

Article en En | MEDLINE | ID: mdl-35214921

Palabras clave

SRAM; bottom oxide; full adder; multi-nanosheet FET; punch-through-stopper; ring oscillator

Texto completo

Añadir a Mi BVS

Imprimir

XML

PubMed Links

Buscar en Google

Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Tipo de estudio: Prognostic_studies Idioma: En Revista: Nanomaterials (Basel) Año: 2022 Tipo del documento: Article Pais de publicación: Suiza

Texto completo

Añadir a Mi BVS

Imprimir

XML

PubMed Links

Buscar en Google