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Unidirectional Elimination of Hydrogen by a Giant Local Field Saves First- and Last-Mile Performances of Semiconductor Devices.
Lu, Shiqiang; Zhong, Zhibai; Guo, Bin; Chen, Xiaohong; Liu, Guozhen; Lin, Zefeng; Chen, Han; Huang, Shengrong; Liang, Xudong; Zheng, Yuanzhi; Huang, Xiaohui; Wang, Mingxing; Xu, Fujun; Zhang, Yanhua; Zhang, Canming; Wang, Xudong; Zhou, Yinghui; Li, Shuping; Lee, June Key; Cai, Duanjun; Kang, Junyong.
Afiliación
  • Lu S; Fujian Key Laboratory of Semiconductor Materials and Applications, CI Center for OSED, College of Physical Science and Technology, Xiamen University, Xiamen 361005, China.
  • Zhong Z; Department of Materials Science and Engineering, and Optoelectronics Convergence Research Center, Chonnam National University, Gwangju 500-757, South Korea.
  • Guo B; Fujian Key Laboratory of Semiconductor Materials and Applications, CI Center for OSED, College of Physical Science and Technology, Xiamen University, Xiamen 361005, China.
  • Chen X; Fujian Key Laboratory of Semiconductor Materials and Applications, CI Center for OSED, College of Physical Science and Technology, Xiamen University, Xiamen 361005, China.
  • Liu G; Fujian Key Laboratory of Semiconductor Materials and Applications, CI Center for OSED, College of Physical Science and Technology, Xiamen University, Xiamen 361005, China.
  • Lin Z; Fujian Key Laboratory of Semiconductor Materials and Applications, CI Center for OSED, College of Physical Science and Technology, Xiamen University, Xiamen 361005, China.
  • Chen H; Fujian Key Laboratory of Semiconductor Materials and Applications, CI Center for OSED, College of Physical Science and Technology, Xiamen University, Xiamen 361005, China.
  • Huang S; Fujian Key Laboratory of Semiconductor Materials and Applications, CI Center for OSED, College of Physical Science and Technology, Xiamen University, Xiamen 361005, China.
  • Liang X; EtaDUV Department of R&D, Etanics Semiconductor Ltd, Xiamen 361006, China.
  • Zheng Y; Maanshan Jason Semiconductor Co., Ltd., E&T Development Zone Maanshan, Maanshan 243071, China.
  • Huang X; Maanshan Jason Semiconductor Co., Ltd., E&T Development Zone Maanshan, Maanshan 243071, China.
  • Wang M; BeyondUV Co., Ltd., Hangzhou 311200, China.
  • Xu F; State Key Laboratory for Artificial Microstructures and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China.
  • Zhang Y; State Key Laboratory for Artificial Microstructures and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China.
  • Zhang C; Fujian Provincial Center for Disease Control and Prevention, Fuzhou 350001, China.
  • Wang X; Fujian Provincial Center for Disease Control and Prevention, Fuzhou 350001, China.
  • Zhou Y; Fujian Key Laboratory of Semiconductor Materials and Applications, CI Center for OSED, College of Physical Science and Technology, Xiamen University, Xiamen 361005, China.
  • Li S; Fujian Key Laboratory of Semiconductor Materials and Applications, CI Center for OSED, College of Physical Science and Technology, Xiamen University, Xiamen 361005, China.
  • Lee JK; Fujian Key Laboratory of Semiconductor Materials and Applications, CI Center for OSED, College of Physical Science and Technology, Xiamen University, Xiamen 361005, China.
  • Cai D; Department of Materials Science and Engineering, and Optoelectronics Convergence Research Center, Chonnam National University, Gwangju 500-757, South Korea.
  • Kang J; Fujian Key Laboratory of Semiconductor Materials and Applications, CI Center for OSED, College of Physical Science and Technology, Xiamen University, Xiamen 361005, China.
J Phys Chem Lett ; 13(9): 2084-2093, 2022 Mar 10.
Article en En | MEDLINE | ID: mdl-35213162
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: J Phys Chem Lett Año: 2022 Tipo del documento: Article País de afiliación: China Pais de publicación: Estados Unidos
Texto completo
Añadir a Mi BVS
Imprimir
XML
PubMed Links
Buscar en Google

Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: J Phys Chem Lett Año: 2022 Tipo del documento: Article País de afiliación: China Pais de publicación: Estados Unidos