Your browser doesn't support javascript.
loading
High-Quality Graphene Using Boudouard Reaction.
Grebenko, Artem K; Krasnikov, Dmitry V; Bubis, Anton V; Stolyarov, Vasily S; Vyalikh, Denis V; Makarova, Anna A; Fedorov, Alexander; Aitkulova, Aisuluu; Alekseeva, Alena A; Gilshtein, Evgeniia; Bedran, Zakhar; Shmakov, Alexander N; Alyabyeva, Liudmila; Mozhchil, Rais N; Ionov, Andrey M; Gorshunov, Boris P; Laasonen, Kari; Podzorov, Vitaly; Nasibulin, Albert G.
Afiliación
  • Grebenko AK; Skolkovo Institute of Science and Technology, Nobel str. 3, Moscow, 121205, Russia.
  • Krasnikov DV; Moscow Institute of Physics and Technology, Institute Lane 9, Dolgoprudny, Russia.
  • Bubis AV; Skolkovo Institute of Science and Technology, Nobel str. 3, Moscow, 121205, Russia.
  • Stolyarov VS; Skolkovo Institute of Science and Technology, Nobel str. 3, Moscow, 121205, Russia.
  • Vyalikh DV; Insitute of Solid State Physics (RAS), Academician Ossupyan str. 2, Chernogolovka, Russia.
  • Makarova AA; Moscow Institute of Physics and Technology, Institute Lane 9, Dolgoprudny, Russia.
  • Fedorov A; Dukhov Research Institute of Automatics (VNIIA), Moscow, 127055, Russia.
  • Aitkulova A; National University of Science and Technology MISIS, Moscow, 119049, Russia.
  • Alekseeva AA; Donostia International Physics Center (DIPC), Donostia-San Sebastián, 20018, Spain.
  • Gilshtein E; IKERBASQUE, Basque Foundation for Science, Bilbao, 48011, Spain.
  • Bedran Z; Physikalische Chemie, Institut für Chemie und Biochemie, Freie Universität Berlin, Arnimallee 22, Berlin, 14195, Germany.
  • Shmakov AN; IFW Dresden, POB 270116, Dresden, D-01171, Germany.
  • Alyabyeva L; Skolkovo Institute of Science and Technology, Nobel str. 3, Moscow, 121205, Russia.
  • Mozhchil RN; Skolkovo Institute of Science and Technology, Nobel str. 3, Moscow, 121205, Russia.
  • Ionov AM; Skolkovo Institute of Science and Technology, Nobel str. 3, Moscow, 121205, Russia.
  • Gorshunov BP; Empa, Swiss Federal Laboratories for Materials Science and Technology, Ueberlandstrasse 129, Duebendorf, 8600, Switzerland.
  • Laasonen K; Moscow Institute of Physics and Technology, Institute Lane 9, Dolgoprudny, Russia.
  • Podzorov V; Boreskov Institute of Catalysis SB RAS, Novosibirsk, 630090, Russia.
  • Nasibulin AG; Moscow Institute of Physics and Technology, Institute Lane 9, Dolgoprudny, Russia.
Adv Sci (Weinh) ; 9(12): e2200217, 2022 Apr.
Article en En | MEDLINE | ID: mdl-35187847
Following the game-changing high-pressure CO (HiPco) process that established the first facile route toward large-scale production of single-walled carbon nanotubes, CO synthesis of cm-sized graphene crystals of ultra-high purity grown during tens of minutes is proposed. The Boudouard reaction serves for the first time to produce individual monolayer structures on the surface of a metal catalyst, thereby providing a chemical vapor deposition technique free from molecular and atomic hydrogen as well as vacuum conditions. This approach facilitates inhibition of the graphene nucleation from the CO/CO2 mixture and maintains a high growth rate of graphene seeds reaching large-scale monocrystals. Unique features of the Boudouard reaction coupled with CO-driven catalyst engineering ensure not only suppression of the second layer growth but also provide a simple and reliable technique for surface cleaning. Aside from being a novel carbon source, carbon monoxide ensures peculiar modification of catalyst and in general opens avenues for breakthrough graphene-catalyst composite production.
Palabras clave

Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Adv Sci (Weinh) Año: 2022 Tipo del documento: Article País de afiliación: Rusia Pais de publicación: Alemania

Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Adv Sci (Weinh) Año: 2022 Tipo del documento: Article País de afiliación: Rusia Pais de publicación: Alemania