Regulating the valence level arrangement of high-Al-content AlGaN quantum wells using additional potentials with Mg doping.

Lu, Shiqiang; Zheng, Tongchang; Jiang, Ke; Sun, Xiaojuan; Li, Dabing; Chen, Hangyang; Li, Jinchai; Zhou, Yinghui; Cai, Duanjun; Li, Shuping; Lin, Wei; Kang, Junyong

Lu, Shiqiang; Zheng, Tongchang; Jiang, Ke; Sun, Xiaojuan; Li, Dabing; Chen, Hangyang; Li, Jinchai; Zhou, Yinghui; Cai, Duanjun; Li, Shuping; Lin, Wei; Kang, Junyong.

Afiliación

Lu S; Fujian Key Laboratory of Semiconductor Materials and Applications, CI Center for OSED, Department of Physics, Xiamen University, Xiamen 361005, China. linwei@xmu.edu.cn.
Zheng T; Department of Physics, School of Science, Jimei University, Xiamen 361021, China.
Jiang K; State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Dongnanhu Road No. 3888, Changchun 130033, China.
Sun X; State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Dongnanhu Road No. 3888, Changchun 130033, China.
Li D; State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Dongnanhu Road No. 3888, Changchun 130033, China.
Chen H; Fujian Key Laboratory of Semiconductor Materials and Applications, CI Center for OSED, Department of Physics, Xiamen University, Xiamen 361005, China. linwei@xmu.edu.cn.
Li J; Fujian Key Laboratory of Semiconductor Materials and Applications, CI Center for OSED, Department of Physics, Xiamen University, Xiamen 361005, China. linwei@xmu.edu.cn.
Zhou Y; Fujian Key Laboratory of Semiconductor Materials and Applications, CI Center for OSED, Department of Physics, Xiamen University, Xiamen 361005, China. linwei@xmu.edu.cn.
Cai D; Fujian Key Laboratory of Semiconductor Materials and Applications, CI Center for OSED, Department of Physics, Xiamen University, Xiamen 361005, China. linwei@xmu.edu.cn.
Li S; Fujian Key Laboratory of Semiconductor Materials and Applications, CI Center for OSED, Department of Physics, Xiamen University, Xiamen 361005, China. linwei@xmu.edu.cn.
Lin W; Fujian Key Laboratory of Semiconductor Materials and Applications, CI Center for OSED, Department of Physics, Xiamen University, Xiamen 361005, China. linwei@xmu.edu.cn.
Kang J; Fujian Key Laboratory of Semiconductor Materials and Applications, CI Center for OSED, Department of Physics, Xiamen University, Xiamen 361005, China. linwei@xmu.edu.cn.

Phys Chem Chem Phys ; 24(9): 5529-5538, 2022 Mar 02.

Article en En | MEDLINE | ID: mdl-35172325

RESUMEN

Quantum states and arrangement of valence levels determine most of the electronic and optical properties of semiconductors. Since the crystal field split-off hole (CH) band is the top valence band in high-Al-content AlGaN, TM-polarized optical anisotropy has become the limiting factor for efficient deep-ultraviolet (DUV) light emission. Additional potentials, including on-site Coulomb interaction and orbital state coupling induced by magnesium (Mg) doping, are proposed in this work to regulate the valence level arrangement of AlN/Al0.75Ga0.25N quantum wells (QWs). Diverse responses of valence quantum states |piã (i = x, y, or z) of AlGaN to additional potentials due to different configurations and interactions of orbitals revealed by first-principles simulations are understood in terms of the linear combination of atomic orbital states. A positive charge and large Mg dopant in QWs introduce an additional Coulomb potential and modulate the orbital coupling distance. For the CH band (pz orbital), the Mg-induced Coulomb potential compensates the orbital coupling energy. Meanwhile, the heavy/light hole (HH/LH) bands (px and py orbitals) are elevated by the Mg-induced Coulomb potential. Consequently, HH/LH energy levels are relatively shifted upward and replace the CH level to be the top of the valence band. The inversion of optical anisotropy and enhancement of TE-polarized emission are further confirmed experimentally via spectroscopic ellipsometry.

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Phys Chem Chem Phys Asunto de la revista: BIOFISICA / QUIMICA Año: 2022 Tipo del documento: Article País de afiliación: China Pais de publicación: Reino Unido

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