Ultrafast carrier dynamics in a monolayer MoS<sub>2</sub>at carrier densities well above Mott density.

Khatua, Durga Prasad; Singh, Asha; Gurung, Sabina; Khan, Salahuddin; Tanwar, Manushree; Kumar, Rajesh; Jayabalan, J

Ultrafast carrier dynamics in a monolayer MoS₂at carrier densities well above Mott density.

Khatua, Durga Prasad; Singh, Asha; Gurung, Sabina; Khan, Salahuddin; Tanwar, Manushree; Kumar, Rajesh; Jayabalan, J.

Afiliación

Khatua DP; Nano Science Laboratory, Materials Science Section, Raja Ramanna Centre for Advanced Technology, Indore, 452013 India.
Singh A; Homi Bhabha National Institute, Training School Complex, Anushakti Nagar, Mumbai, 400094, India.
Gurung S; Nano Science Laboratory, Materials Science Section, Raja Ramanna Centre for Advanced Technology, Indore, 452013 India.
Khan S; Nano Science Laboratory, Materials Science Section, Raja Ramanna Centre for Advanced Technology, Indore, 452013 India.
Tanwar M; Department of Physics, Institute for Quantum Electronics, ETH Zurich, 8093, Switzerland.
Kumar R; Nano Science Laboratory, Materials Science Section, Raja Ramanna Centre for Advanced Technology, Indore, 452013 India.
Jayabalan J; Materials and Device Laboratory, Department of Physics, Indian Institute of Technology Indore, Simrol, 453552, India.

J Phys Condens Matter ; 34(15)2022 Feb 08.

Article en En | MEDLINE | ID: mdl-35062012

Palabras clave

band gap renormalization; monolayer MoS2; ultrafast carrier dynamics

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: J Phys Condens Matter Asunto de la revista: BIOFISICA Año: 2022 Tipo del documento: Article Pais de publicación: Reino Unido

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