Mechanical Stress Modulation of Resistance in MoS<sub>2</sub> Junctions.

Chaudhary, Pradeep; Lu, Haidong; Loes, Michael; Lipatov, Alexey; Sinitskii, Alexander; Gruverman, Alexei

Mechanical Stress Modulation of Resistance in MoS₂ Junctions.

Chaudhary, Pradeep; Lu, Haidong; Loes, Michael; Lipatov, Alexey; Sinitskii, Alexander; Gruverman, Alexei.

Afiliación

Chaudhary P; Department of Physics and Astronomy, University of Nebraska, Lincoln, Nebraska 68588, United States.
Lu H; Department of Physics and Astronomy, University of Nebraska, Lincoln, Nebraska 68588, United States.
Loes M; Department of Chemistry, University of Nebraska, Lincoln, Nebraska 68588, United States.
Lipatov A; Department of Chemistry, University of Nebraska, Lincoln, Nebraska 68588, United States.
Sinitskii A; Department of Chemistry, University of Nebraska, Lincoln, Nebraska 68588, United States.
Gruverman A; Department of Physics and Astronomy, University of Nebraska, Lincoln, Nebraska 68588, United States.

Nano Lett ; 22(3): 1047-1052, 2022 Feb 09.

Article en En | MEDLINE | ID: mdl-35041432

Palabras clave

electronic transport; flexoelectricity; photovoltaic effect; strain gradient; two-dimensional MoS2

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Nano Lett Año: 2022 Tipo del documento: Article País de afiliación: Estados Unidos Pais de publicación: Estados Unidos

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