Carrier dynamics at trench defects in InGaN/GaN quantum wells revealed by time-resolved cathodoluminescence.

Kusch, Gunnar; Comish, Ella J; Loeto, Kagiso; Hammersley, Simon; Kappers, Menno J; Dawson, Phil; Oliver, Rachel A; Massabuau, Fabien C-P

Kusch, Gunnar; Comish, Ella J; Loeto, Kagiso; Hammersley, Simon; Kappers, Menno J; Dawson, Phil; Oliver, Rachel A; Massabuau, Fabien C-P.

Afiliación

Kusch G; Department of Materials Science and Metallurgy, University of Cambridge, Cambridge CB3 0FS, UK. f.massabuau@strath.ac.uk.
Comish EJ; Department of Materials Science and Metallurgy, University of Cambridge, Cambridge CB3 0FS, UK. f.massabuau@strath.ac.uk.
Loeto K; Department of Materials Science and Metallurgy, University of Cambridge, Cambridge CB3 0FS, UK. f.massabuau@strath.ac.uk.
Hammersley S; Photon Science Institute, Department of Electrical and Electronic Engineering, School of Engineering, The University of Manchester, Manchester, M13 9PL, UK.
Kappers MJ; Poro Technologies Ltd, Sawston, CB22 3JH, UK.
Dawson P; Department of Materials Science and Metallurgy, University of Cambridge, Cambridge CB3 0FS, UK. f.massabuau@strath.ac.uk.
Oliver RA; Department of Materials Science and Metallurgy, University of Cambridge, Cambridge CB3 0FS, UK. f.massabuau@strath.ac.uk.
Massabuau FC; Department of Materials Science and Metallurgy, University of Cambridge, Cambridge CB3 0FS, UK. f.massabuau@strath.ac.uk.

Nanoscale ; 14(2): 402-409, 2022 Jan 06.

Article en En | MEDLINE | ID: mdl-34919106

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Nanoscale Año: 2022 Tipo del documento: Article País de afiliación: Reino Unido Pais de publicación: Reino Unido

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