Your browser doesn't support javascript.
loading
Microstructures of HfOx Films Prepared via Atomic Layer Deposition Using La(NO3)3·6H2O Oxidants.
Kim, Seon Yong; Jung, Yong Chan; Seong, Sejong; Lee, Taehoon; Park, In-Sung; Ahn, Jinho.
Afiliación
  • Kim SY; Division of Materials Science and Engineering, Hanyang University, Seoul 04763, Korea.
  • Jung YC; Division of Materials Science and Engineering, Hanyang University, Seoul 04763, Korea.
  • Seong S; Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, TX 75080, USA.
  • Lee T; Division of Materials Science and Engineering, Hanyang University, Seoul 04763, Korea.
  • Park IS; Division of Materials Science and Engineering, Hanyang University, Seoul 04763, Korea.
  • Ahn J; Institute of Nano Science and Technology, Hanyang University, Seoul 04763, Korea.
Materials (Basel) ; 14(23)2021 Dec 06.
Article en En | MEDLINE | ID: mdl-34885632
Hafnium oxide (HfOx) films have a wide range of applications in solid-state devices, including metal-oxide-semiconductor field-effect transistors (MOSFETs). The growth of HfOx films from the metal precursor tetrakis(ethylmethylamino) hafnium with La(NO3)3·6H2O solution (LNS) as an oxidant was investigated. The atomic layer deposition (ALD) conditions were optimized, and the chemical state, surface morphology, and microstructure of the prepared films were characterized. Furthermore, to better understand the effects of LNS on the deposition process, HfOx films deposited using a conventional oxidant (H2O) were also prepared. The ALD process using LNS was observed to be self-limiting, with an ALD temperature window of 200-350 °C and a growth rate of 1.6 Å per cycle, two times faster than that with H2O. HfOx films deposited using the LNS oxidant had smaller crystallites than those deposited using H2O, as well as more suboxides or defects because of the higher number of grain boundaries. In addition, there was a difference in the preferred orientations of the HfOx films deposited using LNS and H2O, and consequently, a difference in surface energy. Finally, a film growth model based on the surface energy difference was proposed to explain the observed growth rate and crystallite size trends.
Palabras clave
Texto completo
Añadir a Mi BVS
Imprimir
XML
PubMed Links
Buscar en Google

Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Materials (Basel) Año: 2021 Tipo del documento: Article Pais de publicación: Suiza
Texto completo
Añadir a Mi BVS
Imprimir
XML
PubMed Links
Buscar en Google

Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Materials (Basel) Año: 2021 Tipo del documento: Article Pais de publicación: Suiza