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Dipole Moment- and Molecular Orbital-Engineered Phosphine Oxide-Free Host Materials for Efficient and Stable Blue Thermally Activated Delayed Fluorescence.
Ihn, Soo-Ghang; Jeong, Daun; Kwon, Eun Suk; Kim, Sangmo; Chung, Yeon Sook; Sim, Myungsun; Chwae, Jun; Koishikawa, Yasushi; Jeon, Soon Ok; Kim, Jong Soo; Kim, Joonghyuk; Nam, Sungho; Kim, Inkoo; Park, Sangho; Kim, Dae Sin; Choi, Hyeonho; Kim, Sunghan.
Afiliación
  • Ihn SG; Samsung Advanced Institute of Technology, Samsung Electronics Co., LTD, 130 Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, 16678, Korea.
  • Jeong D; CSE team, Data and Information Technology Center, Samsung Electronics Co., LTD, 1 Samsungjeonja-ro, Hwaseong-si, Gyeonggi-do, 18448, Korea.
  • Kwon ES; Samsung Advanced Institute of Technology, Samsung Electronics Co., LTD, 130 Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, 16678, Korea.
  • Kim S; Samsung Advanced Institute of Technology, Samsung Electronics Co., LTD, 130 Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, 16678, Korea.
  • Chung YS; Samsung Advanced Institute of Technology, Samsung Electronics Co., LTD, 130 Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, 16678, Korea.
  • Sim M; Samsung Advanced Institute of Technology, Samsung Electronics Co., LTD, 130 Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, 16678, Korea.
  • Chwae J; Samsung Advanced Institute of Technology, Samsung Electronics Co., LTD, 130 Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, 16678, Korea.
  • Koishikawa Y; Samsung Advanced Institute of Technology, Samsung Electronics Co., LTD, 130 Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, 16678, Korea.
  • Jeon SO; Samsung Advanced Institute of Technology, Samsung Electronics Co., LTD, 130 Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, 16678, Korea.
  • Kim JS; Samsung Advanced Institute of Technology, Samsung Electronics Co., LTD, 130 Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, 16678, Korea.
  • Kim J; Samsung Advanced Institute of Technology, Samsung Electronics Co., LTD, 130 Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, 16678, Korea.
  • Nam S; Samsung Advanced Institute of Technology, Samsung Electronics Co., LTD, 130 Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, 16678, Korea.
  • Kim I; CSE team, Data and Information Technology Center, Samsung Electronics Co., LTD, 1 Samsungjeonja-ro, Hwaseong-si, Gyeonggi-do, 18448, Korea.
  • Park S; Samsung Advanced Institute of Technology, Samsung Electronics Co., LTD, 130 Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, 16678, Korea.
  • Kim DS; CSE team, Data and Information Technology Center, Samsung Electronics Co., LTD, 1 Samsungjeonja-ro, Hwaseong-si, Gyeonggi-do, 18448, Korea.
  • Choi H; Samsung Advanced Institute of Technology, Samsung Electronics Co., LTD, 130 Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, 16678, Korea.
  • Kim S; Samsung Advanced Institute of Technology, Samsung Electronics Co., LTD, 130 Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, 16678, Korea.
Adv Sci (Weinh) ; 9(3): e2102141, 2022 Jan.
Article en En | MEDLINE | ID: mdl-34802190
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Adv Sci (Weinh) Año: 2022 Tipo del documento: Article Pais de publicación: Alemania
Texto completo
Añadir a Mi BVS
Imprimir
XML
PubMed Links
Buscar en Google

Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Adv Sci (Weinh) Año: 2022 Tipo del documento: Article Pais de publicación: Alemania