Structural Analysis of Low Defect Ammonothermally Grown GaN Wafers by Borrmann Effect X-ray Topography.

Kirste, Lutz; Grabianska, Karolina; Kucharski, Robert; Sochacki, Tomasz; Lucznik, Boleslaw; Bockowski, Michal

Kirste, Lutz; Grabianska, Karolina; Kucharski, Robert; Sochacki, Tomasz; Lucznik, Boleslaw; Bockowski, Michal.

Afiliación

Kirste L; Fraunhofer Institute for Applied Solid State Physics (IAF), Tullastraße 72, 79108 Freiburg, Germany.
Grabianska K; Institute of High-Pressure Physics of the Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland.
Kucharski R; Institute of High-Pressure Physics of the Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland.
Sochacki T; Institute of High-Pressure Physics of the Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland.
Lucznik B; Institute of High-Pressure Physics of the Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland.
Bockowski M; Institute of High-Pressure Physics of the Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland.

Materials (Basel) ; 14(19)2021 Sep 22.

Article en En | MEDLINE | ID: mdl-34639870

Palabras clave

Borrmann effect; GaN; X-ray topography; ammonothermal method; crystal growth; defects

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Materials (Basel) Año: 2021 Tipo del documento: Article País de afiliación: Alemania Pais de publicación: Suiza

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