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Sublattice Dependence and Gate Tunability of Midgap and Resonant States Induced by Native Dopants in Bernal-Stacked Bilayer Graphene.
Joucken, Frédéric; Bena, Cristina; Ge, Zhehao; Quezada-Lopez, Eberth Arturo; Ducastelle, François; Tanagushi, Takashi; Watanabe, Kenji; Velasco, Jairo.
Afiliación
  • Joucken F; Department of Physics, University of California, Santa Cruz, California 95064, USA.
  • Bena C; Department of Physics, Box 871504, Arizona State University, Tempe, Arizona 85287, USA.
  • Ge Z; Institut de Physique Théorique, Université Paris Saclay, CEA CNRS, Orme des Merisiers, 91190 Gif-sur-Yvette Cedex, France.
  • Quezada-Lopez EA; Department of Physics, University of California, Santa Cruz, California 95064, USA.
  • Ducastelle F; Department of Physics, University of California, Santa Cruz, California 95064, USA.
  • Tanagushi T; Laboratoire d'Etude des Microstructures, ONERA-CNRS, UMR104, Université Paris-Saclay, B.P. 72, 92322 Châtillon Cedex, France.
  • Watanabe K; International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan.
  • Velasco J; Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan.
Phys Rev Lett ; 127(10): 106401, 2021 Sep 03.
Article en En | MEDLINE | ID: mdl-34533366
The properties of semiconductors can be crucially impacted by midgap states induced by dopants, which can be native or intentionally incorporated in the crystal lattice. For Bernal-stacked bilayer graphene (BLG), which has a tunable band gap, the existence of midgap states induced by dopants or adatoms has been investigated theoretically and observed indirectly in electron transport experiments. Here, we characterize BLG midgap states in real space, with atomic-scale resolution with scanning tunneling microscopy and spectroscopy. We show that the midgap states in BLG-for which we demonstrate gate tunability-appear when the dopant is hosted on the nondimer sublattice sites. We further evidence the presence of narrow resonances at the onset of the high-energy bands (valence or conduction, depending on the dopant type) when the dopants lie on the dimer sublattice sites. Our results are supported by tight-binding calculations that agree remarkably well with the experimental findings.
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Phys Rev Lett Año: 2021 Tipo del documento: Article País de afiliación: Estados Unidos Pais de publicación: Estados Unidos
Texto completo
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Phys Rev Lett Año: 2021 Tipo del documento: Article País de afiliación: Estados Unidos Pais de publicación: Estados Unidos