Enhanced H<sub>2</sub> Storage Capacity of Bilayer Hexagonal Boron Nitride (h-BN) Incorporating van der Waals Interaction under an Applied External Electric Field.

Chettri, Bhanu; Patra, Prasanta Kumar; Srivastava, Sunita; Laref, Amel; Rai, Dibya Prakash

Enhanced H₂ Storage Capacity of Bilayer Hexagonal Boron Nitride (h-BN) Incorporating van der Waals Interaction under an Applied External Electric Field.

Chettri, Bhanu; Patra, Prasanta Kumar; Srivastava, Sunita; Laref, Amel; Rai, Dibya Prakash.

Afiliación

Chettri B; Department of Physics, North-Eastern Hill University, Shillong, Meghalaya 793022, India.
Patra PK; Physical Sciences Research Center (PSRC), Department of Physics, Pachhunga University College, Mizoram University, Aizawl 796001, India.
Srivastava S; Department of Physics, North-Eastern Hill University, Shillong, Meghalaya 793022, India.
Laref A; Department of Physics, Guru Jambheshwar University of Science & Technology, Hisar 125001, Haryana, India.
Rai DP; Department of Physics, Panjab University, Chandigarh 160014, India.

ACS Omega ; 6(34): 22374-22382, 2021 Aug 31.

Article en En | MEDLINE | ID: mdl-34497926

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: ACS Omega Año: 2021 Tipo del documento: Article País de afiliación: India Pais de publicación: Estados Unidos

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