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Gate Control of Spin-Layer-Locking FETs and Application to Monolayer LuIO.
Zhang, Rong; Marrazzo, Antimo; Verstraete, Matthieu Jean; Marzari, Nicola; Sohier, Thibault Daniel Pierre.
Afiliación
  • Zhang R; Theory and Simulation of Materials (THEOS) and National Centre for Computational Design and Discovery of Novel Materials (MARVEL), École Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland.
  • Marrazzo A; Theory and Simulation of Materials (THEOS) and National Centre for Computational Design and Discovery of Novel Materials (MARVEL), École Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland.
  • Verstraete MJ; Dipartimento di Fisica, Università di Trieste, Strada Costiera 11, 34151 Trieste, Italy.
  • Marzari N; Nanomat/QMAT/CESAM and European Theoretical Spectroscopy Facility, University of Liège, Allée du 6 Août 19 (B5a), 4000 Liège, Belgium.
  • Sohier TDP; Theory and Simulation of Materials (THEOS) and National Centre for Computational Design and Discovery of Novel Materials (MARVEL), École Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland.
Nano Lett ; 21(18): 7631-7636, 2021 09 22.
Article en En | MEDLINE | ID: mdl-34460271
A recent 2D spinFET concept proposes to switch electrostatically between two separate sublayers with strong and opposite intrinsic Rashba effects, exploiting the spin-layer-locking mechanism in centrosymmetric materials with local dipole fields. Here, we propose a novel monolayer material within this family, lutetium oxide iodide (LuIO). It displays one of the largest Rashba effects among 2D materials (up to kR = 0.08 Å-1), leading to a π/2 rotation of the spins over just 1 nm. The monolayer was predicted to be exfoliable from its experimentally known 3D bulk counterpart, with a binding energy lower than graphene. We characterize and simulate the interplay of the two gate-controlled parameters for such devices: doping and spin channel selection. We show that the ability to split the spin channels in energy diminishes with doping, leading to specific gate-operation guidelines that can apply to all devices based on spin-layer locking.
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Asunto principal: Óxidos / Grafito Idioma: En Revista: Nano Lett Año: 2021 Tipo del documento: Article País de afiliación: Suiza Pais de publicación: Estados Unidos
Texto completo
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XML
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Asunto principal: Óxidos / Grafito Idioma: En Revista: Nano Lett Año: 2021 Tipo del documento: Article País de afiliación: Suiza Pais de publicación: Estados Unidos