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Giant Topological Hall Effect in van der Waals Heterostructures of CrTe2/Bi2Te3.
Zhang, Xiaoqian; Ambhire, Siddhesh C; Lu, Qiangsheng; Niu, Wei; Cook, Jacob; Jiang, Jidong Samuel; Hong, Deshun; Alahmed, Laith; He, Liang; Zhang, Rong; Xu, Yongbing; Zhang, Steven S-L; Li, Peng; Bian, Guang.
Afiliación
  • Zhang X; Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China.
  • Ambhire SC; Department of Physics and Astronomy, University of Missouri, Columbia, Missouri 65211, United States.
  • Lu Q; Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen, Guangdong 518055, China.
  • Niu W; Department of Physics, Case Western Reserve University, Cleveland, Ohio 44106, United States.
  • Cook J; Department of Physics and Astronomy, University of Missouri, Columbia, Missouri 65211, United States.
  • Jiang JS; New Energy Technology Engineering Laboratory of Jiangsu Provence & School of Science, Nanjing University of Posts and Telecommunications, Nanjing 210023, China.
  • Hong D; Department of Physics and Astronomy, University of Missouri, Columbia, Missouri 65211, United States.
  • Alahmed L; Materials Science Division, Argonne National Laboratory, Lemont, Illinois 60439, United States.
  • He L; Materials Science Division, Argonne National Laboratory, Lemont, Illinois 60439, United States.
  • Zhang R; Department of Electrical and Computer Engineering, Auburn University, Auburn, Alabama 36849, United States.
  • Xu Y; Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China.
  • Zhang SS; Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China.
  • Li P; Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China.
  • Bian G; York-Nanjing Joint Centre (YNJC) for spintronics and nano engineering, Department of Electronic Engineering, The University of York, York YO10 3DD, United Kingdom.
ACS Nano ; 15(10): 15710-15719, 2021 Oct 26.
Article en En | MEDLINE | ID: mdl-34460216
Discoveries of the interfacial topological Hall effect (THE) provide an ideal platform for exploring the physics arising from the interplay between topology and magnetism. The interfacial topological Hall effect is closely related to the Dzyaloshinskii-Moriya interaction (DMI) at an interface and topological spin textures. However, it is difficult to achieve a sizable THE in heterostructures due to the stringent constraints on the constituents of THE heterostructures, such as strong spin-orbit coupling (SOC). Here, we report the observation of a giant THE signal of 1.39 µΩ·cm in the van der Waals heterostructures of CrTe2/Bi2Te3 fabricated by molecular beam epitaxy, a prototype of two-dimensional (2D) ferromagnet (FM)/topological insulator (TI). This large magnitude of THE is attributed to an optimized combination of 2D ferromagnetism in CrTe2, strong SOC in Bi2Te3, and an atomically sharp interface. Our work reveals CrTe2/Bi2Te3 as a convenient platform for achieving large interfacial THE in hybrid systems, which could be utilized to develop quantum science and high-density information storage devices.
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: ACS Nano Año: 2021 Tipo del documento: Article País de afiliación: China Pais de publicación: Estados Unidos
Texto completo
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: ACS Nano Año: 2021 Tipo del documento: Article País de afiliación: China Pais de publicación: Estados Unidos