Torsional strain engineering of transition metal dichalcogenide nanotubes: an<i>ab initio</i>study.

Bhardwaj, Arpit; Sharma, Abhiraj; Suryanarayana, Phanish

Torsional strain engineering of transition metal dichalcogenide nanotubes: anab initiostudy.

Bhardwaj, Arpit; Sharma, Abhiraj; Suryanarayana, Phanish.

Afiliación

Bhardwaj A; College of Engineering, Georgia Institute of Technology, Atlanta, GA 30332, United States of America.
Sharma A; College of Engineering, Georgia Institute of Technology, Atlanta, GA 30332, United States of America.
Suryanarayana P; College of Engineering, Georgia Institute of Technology, Atlanta, GA 30332, United States of America.

Nanotechnology ; 32(47)2021 Sep 01.

Article en En | MEDLINE | ID: mdl-34348245

Palabras clave

bandgap; density functional theory; effective mass of charge carriers; strain engineering; transition metal dichalcogenide nanotubes

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Nanotechnology Año: 2021 Tipo del documento: Article País de afiliación: Estados Unidos Pais de publicación: Reino Unido

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