Room-Temperature Chiral Light-Emitting Diode Based on Strained Monolayer Semiconductors.

Pu, Jiang; Zhang, Wenjin; Matsuoka, Hirofumi; Kobayashi, Yu; Takaguchi, Yuhei; Miyata, Yasumitsu; Matsuda, Kazunari; Miyauchi, Yuhei; Takenobu, Taishi

Pu, Jiang; Zhang, Wenjin; Matsuoka, Hirofumi; Kobayashi, Yu; Takaguchi, Yuhei; Miyata, Yasumitsu; Matsuda, Kazunari; Miyauchi, Yuhei; Takenobu, Taishi.

Afiliación

Pu J; Department of Applied Physics, Nagoya University, Nagoya, 464-8603, Japan.
Zhang W; Institute of Advanced Energy, Kyoto University, Kyoto, 611-0011, Japan.
Matsuoka H; Department of Applied Physics, Nagoya University, Nagoya, 464-8603, Japan.
Kobayashi Y; Department of Physics, Tokyo Metropolitan University, Tokyo, 192-0397, Japan.
Takaguchi Y; Department of Physics, Tokyo Metropolitan University, Tokyo, 192-0397, Japan.
Miyata Y; Department of Physics, Tokyo Metropolitan University, Tokyo, 192-0397, Japan.
Matsuda K; Institute of Advanced Energy, Kyoto University, Kyoto, 611-0011, Japan.
Miyauchi Y; Institute of Advanced Energy, Kyoto University, Kyoto, 611-0011, Japan.
Takenobu T; Department of Applied Physics, Nagoya University, Nagoya, 464-8603, Japan.

Adv Mater ; 33(36): e2100601, 2021 Sep.

Article en En | MEDLINE | ID: mdl-34302397

Palabras clave

chiral electroluminescence; electrolyte; light-emitting diode; strain effects; transition metal dichalcogenide

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Adv Mater Asunto de la revista: BIOFISICA / QUIMICA Año: 2021 Tipo del documento: Article País de afiliación: Japón Pais de publicación: Alemania

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