Quantitative order-parameter measurement in lattice-mismatched AlInP using precession electron diffraction.
J Microsc
; 284(2): 132-141, 2021 Nov.
Article
en En
| MEDLINE
| ID: mdl-34223644
Compound semiconductors play a central role in current light-emitting diodes (LED) technology, but improvements in the red- and amber-emitting components are needed. The semiconductor alloy AlInP offers advantages over incumbent materials by making use of an arrangement in the crystal structure, called 'atomic ordering', that occurs spontaneously under certain deposition conditions. Quantitative measurement of the extent to which the ordering phenomenon occurs is needed to fully exploit the properties of the ordered material. Transmission electron diffraction offers a means to directly probe the ordered structures, but the quantification of electron-diffraction data has been a long-standing challenge, due to multiple scattering processes, referred to as 'dynamical' diffraction. The method of precession electron diffraction (PED) addresses this problem and has found numerous applications in crystallography. We have applied PED to ordered AlInP films, using computer-controlled acquisition to perform alignments and construct data sets during collection. A model of the microscopic, ordered domain structure was developed to compare the diffraction data to simulations. Samples grown at different temperatures, and ordered along either one or two directions, were evaluated. The strongest ordering was observed in a sample grown at 650 °C with ordering along two directions.
Texto completo:
1
Colección:
01-internacional
Base de datos:
MEDLINE
Tipo de estudio:
Prognostic_studies
Idioma:
En
Revista:
J Microsc
Año:
2021
Tipo del documento:
Article
País de afiliación:
Estados Unidos
Pais de publicación:
Reino Unido