Terahertz Pulse Emission from Semiconductor Heterostructures Caused by Ballistic Photocurrents.

Malevich, Vitaly Leonidovich; Ziaziulia, Pavel Aliaksandravich; Norkus, Ricardas; Pacebutas, Vaidas; Nevinskas, Ignas; Krotkus, Arunas

Malevich, Vitaly Leonidovich; Ziaziulia, Pavel Aliaksandravich; Norkus, Ricardas; Pacebutas, Vaidas; Nevinskas, Ignas; Krotkus, Arunas.

Afiliación

Malevich VL; Stepanov Institute of Physics, National Academy of Science, Nezavisimosti Avenue 68, 220072 Minsk, Belarus.
Ziaziulia PA; Belarusian State University of Informatics and Radioelectronics, P. Browki Str. 6, 220013 Minsk, Belarus.
Norkus R; Belarusian State University, Nezavisimosti Avenue 4, 220030 Minsk, Belarus.
Pacebutas V; Center for Physical Sciences and Technology, Sauletekio av. 3, LT-10257 Vilnius, Lithuania.
Nevinskas I; Center for Physical Sciences and Technology, Sauletekio av. 3, LT-10257 Vilnius, Lithuania.
Krotkus A; Center for Physical Sciences and Technology, Sauletekio av. 3, LT-10257 Vilnius, Lithuania.

Sensors (Basel) ; 21(12)2021 Jun 12.

Article en En | MEDLINE | ID: mdl-34204838

Palabras clave

GaInAsBi/InP; MBE; THz; THz emission spectroscopy; THz pulse generation; ballistic electrons; band offset; heterojunction

Texto completo

Añadir a Mi BVS

Imprimir

XML

PubMed Links

Buscar en Google

Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Sensors (Basel) Año: 2021 Tipo del documento: Article País de afiliación: Belarús Pais de publicación: Suiza

Texto completo

Añadir a Mi BVS

Imprimir

XML

PubMed Links

Buscar en Google