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Crystal structure and metallization mechanism of the π-radical metal TED.
Kobayashi, Yuka; Hirata, Kazuto; Hood, Samantha N; Yang, Hui; Walsh, Aron; Matsushita, Yoshitaka; Ishioka, Kunie.
Afiliación
  • Kobayashi Y; National Institute for Materials Science (NIMS) Sengen 1-2-1 Tsukuba Ibaraki Japan kobayashi.yuka@nims.go.jp.
  • Hirata K; National Institute for Materials Science (NIMS) Sengen 1-2-1 Tsukuba Ibaraki Japan kobayashi.yuka@nims.go.jp.
  • Hood SN; Department of Materials, Imperial College London Exhibition Road London SW7 2AZ UK a.walsh@imperial.ac.uk.
  • Yang H; Department of Materials, Imperial College London Exhibition Road London SW7 2AZ UK a.walsh@imperial.ac.uk.
  • Walsh A; Department of Materials, Imperial College London Exhibition Road London SW7 2AZ UK a.walsh@imperial.ac.uk.
  • Matsushita Y; National Institute for Materials Science (NIMS) Sengen 1-2-1 Tsukuba Ibaraki Japan kobayashi.yuka@nims.go.jp.
  • Ishioka K; National Institute for Materials Science (NIMS) Sengen 1-2-1 Tsukuba Ibaraki Japan kobayashi.yuka@nims.go.jp.
Chem Sci ; 11(43): 11699-11704, 2020 Sep 11.
Article en En | MEDLINE | ID: mdl-34123200
Radical electrons tend to localize on individual molecules, resulting in an insulating (Mott-Hubbard) bandgap in the solid state. Herein, we report the crystal structure and intrinsic electronic properties of the first single crystal of a π-radical metal, tetrathiafulvalene-extended dicarboxylate (TED). The electrical conductivity is up to 30 000 S cm-1 at 2 K and 2300 S cm-1 at room temperature. Temperature dependence of resistivity obeys a T 3 power-law above T > 100 K, indicating a new type of metal. X-ray crystallographic analysis clarifies the planar TED molecule, with a symmetric intramolecular hydrogen bond, is stacked along longitudinal (the a-axis) and transverse (the b-axis) directions. The π-orbitals are distributed to avoid strong local interactions. First-principles electronic calculations reveal the origin of the metallization giving rise to a wide bandwidth exceeding 1 eV near the Fermi level. TED demonstrates the effect of two-dimensional stacking of π-orbitals on electron delocalization, where a high carrier mobility of 31.6 cm2 V-1 s-1 (113 K) is achieved.

Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Chem Sci Año: 2020 Tipo del documento: Article Pais de publicación: Reino Unido

Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Chem Sci Año: 2020 Tipo del documento: Article Pais de publicación: Reino Unido