Significance of Pairing In/Ga Precursor Structures on PEALD InGaO<sub><i>x</i></sub> Thin-Film Transistor.

Hong, TaeHyun; Jeong, Hyun-Jun; Lee, Hyun-Mo; Choi, Su-Hwan; Lim, Jun Hyung; Park, Jin-Seong

Significance of Pairing In/Ga Precursor Structures on PEALD InGaO_x Thin-Film Transistor.

Hong, TaeHyun; Jeong, Hyun-Jun; Lee, Hyun-Mo; Choi, Su-Hwan; Lim, Jun Hyung; Park, Jin-Seong.

Afiliación

Hong T; Division of Materials Science and Engineering, Hanyang University, Seoul, Korea.
Jeong HJ; Division of Materials Science and Engineering, Hanyang University, Seoul, Korea.
Lee HM; Division of Materials Science and Engineering, Hanyang University, Seoul, Korea.
Choi SH; Division of Nanoscale Semiconductor Engineering, Hanyang University, Seoul, Korea.
Lim JH; R&D Center, Samsung Display, Yongin, Korea.
Park JS; Division of Materials Science and Engineering, Hanyang University, Seoul, Korea.

ACS Appl Mater Interfaces ; 13(24): 28493-28502, 2021 Jun 23.

Article en En | MEDLINE | ID: mdl-34115464

Palabras clave

indium gallium oxide (IGO) semiconductor; multicomponent growth mechanism; plasma-enhanced atomic layer deposition (PEALD); precursor chemisorption; thin-film transistor (TFT)

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: ACS Appl Mater Interfaces Asunto de la revista: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Año: 2021 Tipo del documento: Article Pais de publicación: Estados Unidos

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