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Designs of InGaN Micro-LED Structure for Improving Quantum Efficiency at Low Current Density.
Lu, Shiqiang; Li, Jinchai; Huang, Kai; Liu, Guozhen; Zhou, Yinghui; Cai, Duanjun; Zhang, Rong; Kang, Junyong.
Afiliación
  • Lu S; Fujian Key Laboratory of Semiconductor Materials and Applications, CI Center for OSED, College of Physical Science and Technology, Xiamen University, Xiamen, 361005, People's Republic of China.
  • Li J; Fujian Key Laboratory of Semiconductor Materials and Applications, CI Center for OSED, College of Physical Science and Technology, Xiamen University, Xiamen, 361005, People's Republic of China. jinchaili@xmu.edu.cn.
  • Huang K; Future Display Institute of Xiamen, Xiamen, 361005, People's Republic of China. jinchaili@xmu.edu.cn.
  • Liu G; Fujian Key Laboratory of Semiconductor Materials and Applications, CI Center for OSED, College of Physical Science and Technology, Xiamen University, Xiamen, 361005, People's Republic of China.
  • Zhou Y; Future Display Institute of Xiamen, Xiamen, 361005, People's Republic of China.
  • Cai D; Fujian Key Laboratory of Semiconductor Materials and Applications, CI Center for OSED, College of Physical Science and Technology, Xiamen University, Xiamen, 361005, People's Republic of China.
  • Zhang R; Fujian Key Laboratory of Semiconductor Materials and Applications, CI Center for OSED, College of Physical Science and Technology, Xiamen University, Xiamen, 361005, People's Republic of China.
  • Kang J; Fujian Key Laboratory of Semiconductor Materials and Applications, CI Center for OSED, College of Physical Science and Technology, Xiamen University, Xiamen, 361005, People's Republic of China. dcai@xmu.edu.cn.
Nanoscale Res Lett ; 16(1): 99, 2021 Jun 03.
Article en En | MEDLINE | ID: mdl-34081221

Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Nanoscale Res Lett Año: 2021 Tipo del documento: Article Pais de publicación: Estados Unidos

Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Nanoscale Res Lett Año: 2021 Tipo del documento: Article Pais de publicación: Estados Unidos