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Investigation on Ge0.8Si0.2-Selective Atomic Layer Wet-Etching of Ge for Vertical Gate-All-Around Nanodevice.
Xie, Lu; Zhu, Huilong; Zhang, Yongkui; Ai, Xuezheng; Li, Junjie; Wang, Guilei; Du, Anyan; Kong, Zhenzhen; Wang, Qi; Lu, Shunshun; Li, Chen; Li, Yangyang; Huang, Weixing; Radamson, Henry H.
Afiliación
  • Xie L; Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China.
  • Zhu H; Microelectronics Institute, University of Chinese Academy of Sciences, Beijing 100049, China.
  • Zhang Y; Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China.
  • Ai X; Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China.
  • Li J; Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China.
  • Wang G; Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China.
  • Du A; Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China.
  • Kong Z; Microelectronics Institute, University of Chinese Academy of Sciences, Beijing 100049, China.
  • Wang Q; Research and Development Center of Optoelectronic Hybrid IC, Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangdong 510535, China.
  • Lu S; Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China.
  • Li C; Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China.
  • Li Y; Microelectronics Institute, University of Chinese Academy of Sciences, Beijing 100049, China.
  • Huang W; Research and Development Center of Optoelectronic Hybrid IC, Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangdong 510535, China.
  • Radamson HH; Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China.
Nanomaterials (Basel) ; 11(6)2021 May 26.
Article en En | MEDLINE | ID: mdl-34073548
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Nanomaterials (Basel) Año: 2021 Tipo del documento: Article País de afiliación: China Pais de publicación: Suiza
Texto completo
Añadir a Mi BVS
Imprimir
XML
PubMed Links
Buscar en Google

Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Nanomaterials (Basel) Año: 2021 Tipo del documento: Article País de afiliación: China Pais de publicación: Suiza