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The Effect of Doping on the Digital Etching of Silicon-Selective Silicon-Germanium Using Nitric Acids.
Li, Yangyang; Zhu, Huilong; Kong, Zhenzhen; Zhang, Yongkui; Ai, Xuezheng; Wang, Guilei; Wang, Qi; Liu, Ziyi; Lu, Shunshun; Xie, Lu; Huang, Weixing; Liu, Yongbo; Li, Chen; Li, Junjie; Lin, Hongxiao; Su, Jiale; Zeng, Chuanbin; Radamson, Henry H.
Afiliación
  • Li Y; Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China.
  • Zhu H; University of Chinese Academy of Sciences, Beijing 100049, China.
  • Kong Z; Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China.
  • Zhang Y; Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China.
  • Ai X; Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China.
  • Wang G; Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China.
  • Wang Q; Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China.
  • Liu Z; University of Chinese Academy of Sciences, Beijing 100049, China.
  • Lu S; Research and Development Center of Optoelectronic Hybrid IC, Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, China.
  • Xie L; Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China.
  • Huang W; Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China.
  • Liu Y; University of Chinese Academy of Sciences, Beijing 100049, China.
  • Li C; Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China.
  • Li J; Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China.
  • Lin H; University of Chinese Academy of Sciences, Beijing 100049, China.
  • Su J; Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China.
  • Zeng C; University of Chinese Academy of Sciences, Beijing 100049, China.
  • Radamson HH; Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China.
Nanomaterials (Basel) ; 11(5)2021 May 03.
Article en En | MEDLINE | ID: mdl-34063569
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Nanomaterials (Basel) Año: 2021 Tipo del documento: Article País de afiliación: China Pais de publicación: Suiza
Texto completo
Añadir a Mi BVS
Imprimir
XML
PubMed Links
Buscar en Google

Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Nanomaterials (Basel) Año: 2021 Tipo del documento: Article País de afiliación: China Pais de publicación: Suiza