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First Demonstration of Novel Vertical Gate-All-Around Field-Effect-Transistors Featured by Self-Aligned and Replaced High-κ Metal Gates.
Li, Chen; Zhu, Huilong; Zhang, Yongkui; Wang, Qi; Yin, Xiaogen; Li, Junjie; Wang, Guilei; Kong, Zhenzhen; Ai, Xuezheng; Xie, Lu; Liu, Yongbo; Li, Yangyang; Huang, Weixing; Yan, Zijin; Xiao, Zhongrui; Radamson, Henry H; Li, Junfeng; Wang, Wenwu.
Afiliación
  • Li C; Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China.
  • Zhu H; University of Chinese Academy of Sciences, Beijing 100049, China.
  • Zhang Y; Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China.
  • Wang Q; University of Chinese Academy of Sciences, Beijing 100049, China.
  • Yin X; University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China.
  • Li J; Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China.
  • Wang G; Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China.
  • Kong Z; Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China.
  • Ai X; University of Chinese Academy of Sciences, Beijing 100049, China.
  • Xie L; Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China.
  • Liu Y; Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China.
  • Li Y; Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China.
  • Huang W; Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China.
  • Yan Z; Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China.
  • Xiao Z; University of Chinese Academy of Sciences, Beijing 100049, China.
  • Radamson HH; Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China.
  • Li J; University of Chinese Academy of Sciences, Beijing 100049, China.
  • Wang W; Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China.
Nano Lett ; 21(11): 4730-4737, 2021 Jun 09.
Article en En | MEDLINE | ID: mdl-34038143
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Tipo de estudio: Clinical_trials Idioma: En Revista: Nano Lett Año: 2021 Tipo del documento: Article País de afiliación: China Pais de publicación: Estados Unidos
Texto completo
Añadir a Mi BVS
Imprimir
XML
PubMed Links
Buscar en Google

Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Tipo de estudio: Clinical_trials Idioma: En Revista: Nano Lett Año: 2021 Tipo del documento: Article País de afiliación: China Pais de publicación: Estados Unidos