A Study about Schottky Barrier Height and Ideality Factor in Thin Film Transistors with Metal/Zinc Oxide Nanoparticles Structures Aiming Flexible Electronics Application.

Kaufmann, Ivan Rodrigo; Zerey, Onur; Meyers, Thorsten; Reker, Julia; Vidor, Fábio; Hilleringmann, Ulrich

Kaufmann, Ivan Rodrigo; Zerey, Onur; Meyers, Thorsten; Reker, Julia; Vidor, Fábio; Hilleringmann, Ulrich.

Afiliación

Kaufmann IR; Sensor Technology Department, University of Paderborn, 33098 Paderborn, Germany.
Zerey O; CAPES, Coordenação de Aperfeiçoamento de Pessoal de Nível Superior, Brasilia 70040-020, Brazil.
Meyers T; Sensor Technology Department, University of Paderborn, 33098 Paderborn, Germany.
Reker J; Sensor Technology Department, University of Paderborn, 33098 Paderborn, Germany.
Vidor F; Sensor Technology Department, University of Paderborn, 33098 Paderborn, Germany.
Hilleringmann U; Departamento Interdisciplinar, Universidade Federal do Rio Grande do Sul (UFRGS), Tramandaí 95590-000, Brazil.

Nanomaterials (Basel) ; 11(5)2021 Apr 30.

Article en En | MEDLINE | ID: mdl-33946278

Palabras clave

Schottky barrier height; Schottky contact; flexible electronics; metal-semiconductor-metal; thin film transistors; zinc oxide nanoparticles

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Nanomaterials (Basel) Año: 2021 Tipo del documento: Article País de afiliación: Alemania Pais de publicación: Suiza

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